Hole traps in bulk and epitaxial GaAs crystals

Mitonneau, A.; Martin, G. M.; Mircéa, A.

doi:10.1049/el:19770473

Cited by 277 publications

(73 citation statements)

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“…The density of this trap level is two orders of magnitude higher in the GaNAs than in the GaInAs devices. The 0.62 eV hole trap was observed only in the GaInAs devices and is attributed to Fe impurities (4). Composition analysis carried out using secondary-ion mass spectroscopy confirmed the presence of Fe impurities.…”

Section: Dlts Measurementsmentioning

confidence: 89%

Investigation of deep levels in GaInNAs

Abulfotuh

Balcioglu

Friedman

et al. 1999

AIP Conference Proceedings

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Abstract. This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the copresence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length.

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Section: Dlts Measurementsmentioning

confidence: 89%

Investigation of deep levels in GaInNAs

Abulfotuh

Balcioglu

Friedman

et al. 1999

AIP Conference Proceedings

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“…The origin of this defect was attributed to a Cu atom [27,28]; however, the absence of Cu in our chemical compound sources makes this origin low probable. For H2, only one hole trap (HT1) with activation energy of 0.22 eV was reported in GaAs grown by vapor phase epitaxy [29]; however, our investigation of lattice defects in GaAsN showed that the activation energy of H2 varies between 0.1 and 0.2 eV, owing to the pool Frenkel emission phenomenon. Furthermore, H2 was confirmed to be a N related acceptor like state, which structure was suggested to be related to the N H bond and Ga vacancy (V Ga ) [7].…”

Section: Hole Traps In Undoped Gaasnmentioning

confidence: 60%

Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

Bouzazi

Kojima

Ohshita

et al. 2013

AIP Conference Proceedings

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Abstract:The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C J ). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n type and p type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C J has shown that GaAs 311B limits the formation of N H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

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“…This value is much lower than those usually published for known hole traps in bulk GaAs 10 as well as the cross section of a single electron ͑10 Ϫ22 cm 2 ͒. Therefore, it is possible that the cross section might be thermally activated, as can be observed by Levinshtein et al 11 Then can be written as ϭ 0 exp(ϪE a /kT) with 0 a prefactor independent on temperature 12,13 and E a the carrier barrier height energy.…”

Section: With a Mean Value Of Of 3ϫ10mentioning

confidence: 78%

“…͑16͒ prevails, this energy has to be ascribed to a thermally activated capture cross section, thus (T)ϭ 0 exp(ϪE a /kT) with 0 a prefactor. 12,13 Since the p ϩϩ -GaAs layer is degenerated, the number of free holes is nearly independent of the temperature. 16 The thermal velocity is proportional to T 1/2 .…”

Section: B Study Of the Time Constantmentioning

confidence: 99%

Generation-recombination noise analysis in heavily doped p-type GaAs transmission line models

Pascal

Jarrix

Delseny

et al. 1996

Journal of Applied Physics

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Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models. Excess noise exhibits 1/f noise and generation-recombination ͑GR͒ noise components. A study of the GR components vs device geometry shows the spectral densities due to contact resistances to be negligible. Thus the noise sources due to the volume resistances are predominant, and have to be located in the bulk layer or in the space-charge region of the devices. These two possibilities concerning the location of the GR noise sources are investigated. For both cases, expressions for the variance and the relaxation time associated to fluctuations in the charge carriers are given. The comparison between the experimental data with the theoretical results shows that the GR noise sources are located in all probability in the space-charge region.

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Hole traps in bulk and epitaxial GaAs crystals

Cited by 277 publications

References 0 publications

Investigation of deep levels in GaInNAs

Investigation of deep levels in GaInNAs

Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

Generation-recombination noise analysis in heavily doped p-type GaAs transmission line models

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