Hole-tunneling Si_0.82Ge_0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission

Abstract

Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diodes, designed so that the energy difference between the barrier height of the collector side and the coresonance tunneling energy at the coresonance voltage became larger on the basis of the simulation results of voltage-dependent quantized-level shifts and fabricated with the growth of highly B-doped emitter and collector layers without post-annealing, exhibited a flatter surface and a higher performance with a peak current density of 73 kA cm−2 and suppressed thermionic emission with a peak-to-valley current ratio of 14.

Resonant tunnelling of wave packet

“…One of the charactersitic of RTDs is negative differential resistance (NDR) that can be utilized in high speed electronic devices [5][6][7][8]. There are ongoing research on RTDs based on heterostructure materials such as the hole-tunneling in Si 0.82 Ge 0.18 Si asymmetric double-quantum-well RTD with suppressed thermionic emission and significant resonance current studied by Shinkawa et al [9]. On the other hand, an interest is growing on the application of RTDs based on graphene nanoribbons structure [10][11][12][13].…”

Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems

“…They found that under a constant bias, both the spin-up and spin-down current components exhibit the THz oscillations in two different bias voltage regimes. In more recent works, Shinkawa et al [ 15 ] studied the hole-tunneling in Si Ge /Si asymmetric-double-quantum-well RTD with high-resonance current and suppressed thermionic emission. Simultaneously, Encomendero et al [ 16 ] investigated the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection; they found negative differential conductance (NDC) under both bias polarities of GaN/AlN RTDs.…”