Hole tunneling through highly transparent symmetric double-barrier semiconductor structures

Zhu, Jian‐Xin; Wang, Z.D.; Gong, Chang‐De

doi:10.1016/s0038-1098(96)00569-8

Cited by 4 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Valence bands in semiconductors are also intrinsically coupled via the spin-orbit interaction. Envelope function representations have been used extensively in much of the published work on hole transport [15][16][17][18][19][20][21][22]. This paper is an extension of previous work by Kiledjian et al [23,24] who use a nearest neighbor sp3s* empirical tight-binding basis which includes the spin-orbit interaction to all orders and incorporates wavefunction coupling at interfaces through orbital interactions.…”

Section: Why Quantum Mechanical Hole Transport?mentioning

confidence: 99%

Strong wavevector dependence of hole transport in heterostructures

Klimeck

Bowen

Boykin

2001

Superlattices and Microstructures

View full text Add to dashboard Cite

Section: Why Quantum Mechanical Hole Transport?mentioning

confidence: 99%

Strong wavevector dependence of hole transport in heterostructures

Klimeck

Bowen

Boykin

2001

Superlattices and Microstructures

View full text Add to dashboard Cite

“…Envelope-function representations have been used extensively in much of the published work on hole transport. [16][17][18][19][20][21][22][23] This paper is an extension of previous work by Kiledjian et al who use 24,25 a nearestneighbor sp3s* empirical tight-binding basis which includes the spin-orbit interaction to all orders and incorporates wavefunction coupling at interfaces through orbital interactions. To better fit 26,27 the complicated valence-band dispersion we include both nearest-and second-nearest-neighbor interactions.…”

Section: Approachmentioning

confidence: 99%

Off-zone-center or indirect band-gap-like hole transport in heterostructures

2001

View full text Add to dashboard Cite

Unintuitive hole transport phenomena through heterostructures are presented. It is shown that for large bias ranges the majority of carriers travel outside the ⌫ zone center ͑i.e., more carriers travel through the structure at an angle than straight through͒. Strong interaction of heavy-, light-, and split-off hole bands due to heterostructure interfaces present in devices such as resonant tunneling diodes, quantum-well photodetectors, and lasers are shown to be the cause. The result is obtained by careful numerical analysis of the hole transport as a function of the transverse momentum k in a resonant tunneling diode within the framework of a sp3s* second-nearest-neighbor tight-binding model. Three independent mechanisms that generate off-zone-center current flow are explained: ͑1͒ nonmonotonic ͑electronlike͒ hole dispersion, ͑2͒ lighter quantum well than emitter effective masses, and ͑3͒ strongly momentum-dependent quantum-well coupling strength due to state anticrossings. Finally a simulation is compared to experimental data to exemplify the importance of a full numerical transverse momentum integration versus a Tsu-Esaki approximation.

show abstract

“…Magnetotunneling in GaAs-AlGaAs has already been treated in several works, 12,13 but either with the neglect of the material dependence of the Luttinger parameters or within the spherical approximation ͑␥ 2 = ␥ 3 ͒ or in the absence of a magnetic field. 11,14,15 Here, we will go beyond these approximations.…”

Section: Introductionmentioning

confidence: 99%

Magnetotunneling of holes through single and double barriers using a multiband treatment

Krstajić

Peeters

2005

Phys. Rev. B

View full text Add to dashboard Cite

We investigate tunneling of holes through a single barrier which is subject to an in-plane magnetic field. Band mixing between heavy and light holes is pronounced which indicates the necessity of using a multiband approach. The problem is investigated within the 4 ϫ 4 Luttinger-Kohn model for bands at ⌫ 8 , without restriction on the Luttinger parameters. The application of a magnetic field enhances the anisotropy in the transmission coefficients T ͑k x , k y ͒ and makes transitions possible between various channels ͑e.g., the two light holes͒. It is shown that heavy holes can precess when magnetic field is in plane, since band mixing lifts the selection rules for angular momentum. The current density is calculated for a double-barrier resonant structure and compared with a previous approximate theoretical result. This comparison clearly indicates that full wave vector dependence of the tunneling process is needed in order to obtain reliable values for the current.

show abstract

Hole tunneling through highly transparent symmetric double-barrier semiconductor structures

Cited by 4 publications

References 11 publications

Strong wavevector dependence of hole transport in heterostructures

Strong wavevector dependence of hole transport in heterostructures

Off-zone-center or indirect band-gap-like hole transport in heterostructures

Magnetotunneling of holes through single and double barriers using a multiband treatment

Contact Info

Product

Resources

About