Holed nanostructures formed by aluminum droplets on a GaAs substrate

Li, Alvason Zhenhua; Wang, Zhiming M.; Wu, Jiang; Salamo, Gregory J.

doi:10.1007/s12274-010-0009-5

Cited by 23 publications

(13 citation statements)

References 27 publications

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“…Even though the droplets are formed under the same growth conditions, distinctive size and shape are observed from different surfaces for both Ga and Al droplets. Moreover, even though there are few reports on droplet epitaxial growth involving Al droplets 10, 11 unique nanostructures are presented in this study distinct from previous reports. The experiment results suggest that the morphological properties of droplets can be potentially designed by employing different surfaces.…”

Section: Introductioncontrasting

confidence: 59%

Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces

Wang

et al. 2010

Physica Rapid Research Ltrs

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We present a comparative study of gallium (Ga) and aluminium (Al) droplets fabricated on GaAs (100) and AlAs (100) surfaces. Higher density of Ga droplets is achieved on AlAs surface compared with GaAs surface. Similarly, the density of Al nanostructures is higher on AlAs surface than on GaAs surface, even though different morphologies are obtained on each surface. Further, while uniform Ga droplets are formed on both GaAs and AlAs surfaces, Al rings and dots, with big inhomogeneity, are observed on GaAs and AlAs surface, respectively. This investigation suggests that size and shape of nanostructures grown by the droplet epitaxy method can be designed by employing different surfaces. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductioncontrasting

confidence: 59%

Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces

Wang

et al. 2010

Physica Rapid Research Ltrs

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“…Also, the solid-liquid interface between droplet and substrate is an unstable layer with dynamic processes [25], [26]. A sudden exposure of this nonequilibrium interface causes a superior evaporation process, so thatthe resultant evaporated well is much deeper and flatter than the initial interface beneath the droplet.…”

Section: Resultsmentioning

confidence: 99%

Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

Wang

et al. 2011

PLoS ONE

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In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems.

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“…Moreover, the so‐called “nanodrill” effect of group III droplets can be used to create arrays of locally etched nanoholes that serve as growth templates for strain‐free QDs and QD molecules. Such an effect takes place when droplets are kept at relatively high growth temperatures without or at a low As flux . Similar to the fabrication of DE QDs, the substrate temperature and annealing time play a key role in determining the nanohole depth and diameter .…”

Section: Advanced Epitaxial Growth Technology For Novel Single Qdsmentioning

confidence: 99%

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

Zhao

Chen

et al. 2019

Adv Quantum Tech

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Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on‐demand generation of single‐photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. This review is focused on the latest significant progress of QD photonic devices. First, advanced technologies in QD growth are discussed, with special attention to droplet epitaxy and site‐controlled QDs. Then, the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques is overviewed. The discussion is extended to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light‐emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.

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Holed nanostructures formed by aluminum droplets on a GaAs substrate

Cited by 23 publications

References 27 publications

Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces

Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces

Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots

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