Homo-epitaxial growth of single crystal diamond in the purified environment by active O atoms

Abstract

The pure oxygen was introduced into the growth environment of the single crystal diamond with different contents, and the growth characteristics of single crystal diamond and the reaction dynamics in the plasma were studied in detail. As the ratio of O 2 to H 2 is up to 1.5%, the unique shaped etching pits with eight symmetric crystallographic planes appear. Optical emission spectra present typical characteristic radicals in the O 2 incorporated growth environment. With amount of O 2 increases, the growth rate decreases gradually due to the low active carbon source concentration and electron temperature. In the carbon contained hydrogen plasma, O 2 will react with CH radicals preferentially at low concentration and the dynamic equilibrium of CH and C 2 radicals was achieved at the O 2 concentration of 0.5% and 1%. Accompanying with the O 2 addition, the nitrogen and silicon related impurities have been reduced during the epitaxial growth process. Meanwhile, all of the FWHM of characteristic peaks in Raman decrease obviously after the epitaxial growth without and with O 2 addition, and FWHM of most samples are about 2.6cm-1 , which are comparable with the natural type IIa SCD without stress.

Ultra-smooth and hydrophobic nitrogen-incorporated ultranano-crystalline diamond film growth in C-H-O-N gas phase system via microwave plasma CVD

“…Among the various roles of oxygen addition, the strongest enhancement is the gas phase reactions and preferential etching of non-diamond bonded carbon. However, a high ratio of O 2 addition could increase the etching rate of the diamond phase, which would reduce the growth rate and had an adverse effect on smoothness [22,25], as shown in Fig. 2(b).…”

“…Thus different gas system and deposition parameters determine the characteristics of synthetic UNCDs. In addition to the catalytic function of nitrogen for N-UNCD synthesizing [19][20][21], the existence of oxygen in plasma system can effectively improve the crystallinity as a cleaner and surface smoothness of synthesized diamond [22]. On the other hand, graphitization is easier to form in H-poor system because the C 2 radical reaction acts as the main growth mechanism.…”

Effect of oxygen on regulation of properties of moderately boron-doped diamond films

“…[13][14][15] For example, Issaoui et al [16] have studied the effect of oxygen on the heavily boron-doped diamond and shown that the obtained films exhibit high crystalline quality with adding a large amount of oxygen in gas phase. However, most of the prior literature focuses on the effect of oxygen on the properties (such as crystalline quality, [17,18] growth rate, [18,19] and electrical property [17,19] ) in heavily boron-doped diamond. The effect of oxygen on properties of moderately boron-doped diamond is lack of systematic research, especially effect of oxygen on regulation of acceptor concentration and donor concentration, and compensation of oxygen is still unclear.…”

Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

“…Hexagonal boron nitride (h-BN), SiC, and diamond [1,2] are representatives of the third-generation wide-bandgap semiconductor materials. The h-BN is a white crystal, and its crystal structure is very similar to graphite, so the h-BN is also called "white graphite".…”