Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

Williams, Oliver A.; Jackman, Richard B.

doi:10.1063/1.1789275

Cited by 9 publications

(1 citation statement)

References 25 publications

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“…Through CVD methods, single crystal diamond substrates (SCD) with orientation of (100) and (111) were grown and used (Element Six, Ltd). Prior to use, substrates were cleaned in strongly oxidizing solutions to remove any residual organic contaminants and/or adsorbate-hydrogenated surface complexes contributing to surface conductivity [18,19]. To clean the diamond the etch solution consisted of sulphuric acid and ammonium persulphate and the rinse solution was a mixture of hydrogen peroxide and ammonium hydroxide.…”

Section: Cvd Graphene Transferred Onto Diamondmentioning

confidence: 99%

Investigation of CVD graphene topography and surface electrical properties

Wang¹,

Pearce²,

Gallop³

et al. 2016

Surf. Topogr.: Metrol. Prop.

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Combining scanning probe microscopy techniques to characterise samples of graphene, a self-supporting single atomic layer hexagonal lattice of carbon atoms, provides far more information than a single technique can. Here we focus on graphene grown by chemical vapour deposition (CVD), grown by passing carbon containing gas over heated copper, which catalyses single atomic layer growth of graphene on its surface. To be useful for applications the graphene must be transferred onto other substrates. Following transfer it is important to characterise the CVD graphene. We combine atomic force microscopy (AFM) and scanning Kelvin probe microscopy (SKPM) to reveal several properties of the transferred film. AFM alone provides topographic information, showing 'wrinkles' where the transfer provided incomplete substrate attachment. Combined with SKPM which measures the surface potential (SP), indicating regions with different graphene layer numbers, local defects and impurities can also be observed in the SP scan. Finally, Raman spectroscopy can confirm the structural properties of the graphene films, such as the number of layers and level of disorder, by observing the peaks present. We report example data on a number of CVD samples from different sources.

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Section: Cvd Graphene Transferred Onto Diamondmentioning

confidence: 99%

Investigation of CVD graphene topography and surface electrical properties

Wang¹,

Pearce²,

Gallop³

et al. 2016

Surf. Topogr.: Metrol. Prop.

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Solar-blind imaging based on 2-inch polycrystalline diamond photodetector linear array

Zhang

Lin

Yang

et al. 2021

Carbon

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Multiple conduction paths in boron δ-doped diamond structures

Tumilty

Welch

et al. 2009

Applied Physics Letters

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Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-δ-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.

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Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

Cited by 9 publications

References 25 publications

Investigation of CVD graphene topography and surface electrical properties

Investigation of CVD graphene topography and surface electrical properties

Solar-blind imaging based on 2-inch polycrystalline diamond photodetector linear array

Multiple conduction paths in boron δ-doped diamond structures

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