Investigation of CVD graphene topography and surface electrical properties

Wang, Rui; Pearce, Ruth; Gallop, John; Patel, Trupti; Zhao, Fang; Pollard, Andrew J.; Klein, Nigel; Jackman, Richard B.; Zurutuza, Amaia; Líu, Hao

doi:10.1088/2051-672x/4/2/025001

Cited by 4 publications

(2 citation statements)

References 25 publications

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“…Graphene wrinkles exhibits larger surface potential than that of flat areas. 189 The topography and corresponding current map of CVD graphene transferred onto SiO 2 /Si substrate are shown in parts d and e of Figure 43, respectively. 190 The current drops mostly at the wrinkles, while high conductivity is maintained at the transfer-induced ripples, indicating that the wrinkles formed during the growth process have more serious impacts on the graphene conductivity.…”

Section: Influence Of Graphene Wrinkles On Intrinsic Propertiesmentioning

confidence: 99%

“…The distribution of surface charge was examined by scanning the same area of CVD graphene transferred onto quartz substrate using AFM morphology mode and in situ scanning kelvin probe force microscopy (SKPFM) mode. Graphene wrinkles exhibits larger surface potential than that of flat areas . The topography and corresponding current map of CVD graphene transferred onto SiO 2 /Si substrate are shown in parts d and e of Figure , respectively .…”

Section: Intrinsic Wrinkles and Roughness In Cvd Graphenementioning

confidence: 99%

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Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

et al. 2018

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Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.

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Section: Influence Of Graphene Wrinkles On Intrinsic Propertiesmentioning

confidence: 99%

Section: Intrinsic Wrinkles and Roughness In Cvd Graphenementioning

confidence: 99%

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

et al. 2018

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Carbon–Oxygen Radical Assisted Growth of Defect‐Free Graphene Films Using Low‐Temperature Chemical Vapor Deposition

Liu,

Li,

et al. 2024

Small

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Low‐temperature chemical vapor deposition growth of graphene films is a long‐term pursuit in the graphene synthesis field because of the low energy consumption, short heating‐cooling process and low wrinkle density of as‐obtained films. However, insufficient energy supply at low temperature (below 850 °C) usually leads to the difficulty in carbon source dissociation, graphene growth, and defect healing. Herein, a Carbon–Oxygen (C─O) radical assisted strategy is proposed for low‐temperature growth of defect‐free, wrinkle‐free, and single‐crystalline graphene films by using methanol precursor. We provide a deep insight into the growth process fueled by methanol precursor, unveiling the dissociation pathway of methanol and the roles of intermediate C─O radicals in carbon attaching and assembling to graphene lattice without defect formation. This method shows promising prospects in the cost‐effective production of high‐quality graphene films and provides inspiration for growing other 2D materials.

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Variable Angle Spectroscopic Ellipsometry investigation of CVD-grown monolayer graphene

Castriota

Politano

Vena

et al. 2019

Applied Surface Science

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Investigation of CVD graphene topography and surface electrical properties

Cited by 4 publications

References 25 publications

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Carbon–Oxygen Radical Assisted Growth of Defect‐Free Graphene Films Using Low‐Temperature Chemical Vapor Deposition

Variable Angle Spectroscopic Ellipsometry investigation of CVD-grown monolayer graphene

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