Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition

Nishitani‐Gamo, Mikka; Chi, Xiao; Zhang, Yafei; Yasu, Eiji; Kikuchi, Yuko; Sakaguchi, Isao; Suzuki, Toshimitsu; Sato, Yoichiro; Ando, Toshihiro

doi:10.1016/s0040-6090(00)01770-3

Cited by 59 publications

(12 citation statements)

References 25 publications

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“…These results suggest that the origin of the splitting structure is not the presence of sulfur atoms in MWNTs, but rather some function of H 2 S in plasma CVD process, which reduce the carbon double bonds to sp 3 carbon centres ( figure 4(a)). This theory is consistent with the observed improvement in the crystallinity of thin-film diamonds in the CVD process mentioned above [26]. In diamond growth, because H 2 S or some other sulfur species promote the formation of sp 3 -hybridized orbitals and suppress the formation of graphitic carbon, crystallinity should be improved.…”

Section: Resultssupporting

confidence: 88%

“…Therefore, the synthesis of carbon nanotubes using hydrogen sulfide is expected to be very weak and to exhibit good control reaction. In the case of diamonds, Nishitani-Gamo et al have reported that the addition of a small amount of H 2 S gas during the CVD process dramatically improves the crystallinity of thin-film diamonds [26]. Another group has also reported that the pre-treatment of catalyst cobaltnanoparticles with H 2 S improves the yield of aligned and straight carbon nanotubes [27].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

An artificial carbon nano-thorn synthesized by a plasma chemical vapour deposition

Mitsui¹,

Nishitani‐Gamo²,

Zhang³

et al. 2006

J. Phys. D: Appl. Phys.

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We show a structural modification technique which causes the fluctuated surface of multi-wall carbon nanotubes (MWNTs) by using hydrogen sulfide as a reaction-assist medium, which promotes the formation of sp 3-hybridized orbitals of carbon and suppresses the formation of sp 2-hybridized orbitals in the plasma process. We observed the structure of MWNTs synthesized with the addition of H 2 S by means of high-resolution transmission electron microscopy and electron energy loss spectroscopy, and found the cornhusk-like surface fluctuations on the surface of MWNTs. In this study, we discuss the mechanism underlying this structural modification of carbon nanotubes precisely.

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

An artificial carbon nano-thorn synthesized by a plasma chemical vapour deposition

Mitsui¹,

Nishitani‐Gamo²,

Zhang³

et al. 2006

J. Phys. D: Appl. Phys.

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“…Nevertheless, analysis such as SIMS [119] and particle induced X-ray emission spectroscopy (PIXE) [110,120] clearly shows that sulfur is incorporated during growth, the mechanisms for which have some theoretical support [121,122].…”

Section: Chalcogen Donorsmentioning

confidence: 99%

Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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Diamond is a material with superlative properties in terms of carrier mobilities and device characteristics for high power electronics applications. Although p‐type diamond is routinely available using boron, n‐type material via impurity doping during the growth of diamond has historically been limited in success, partly because nitrogen is a hyper‐deep donor, but compounded by the compact lattice leading to low solubilities for alternative species. Implantation doping is often hampered by persistent residual damage leading to significant levels of compensation and the formation of dopant complexes with lattice vacancies. Experiment has been augmented by the application of quantum‐chemical methods to assess the likely properties should specific impurities or impurity complexes be realisable in real materials. The review outlines many of the doping strategies explored for diamond, including simple impurity doping and co‐doping. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Low threshold voltages ( V 0 ) and large field enhancement factors ( β ) for the electron field emission (EFE) in nano‐structured plasma etched and CVD overgrown P‐doped diamonds tip arrays and whiskers make these structures prospective good field emitting devices . In a similar manner S‐doping in homoepitaxial diamond shows Hall mobility values of ∼0.005–597 cm 2 V −1 s −1 , carrier concentration ∼10 13 –10 19 cm −3 and conductivity of ∼10 2 –10 3 Ω −1 cm −1 . Though the Hall measurements hint at n‐type conductivity, structural studies indicate presence of sp 2 content, which can possibly contribute to carrier conduction .…”

Section: Status Of Progress On the Processing Of Diamond Films For Thmentioning

confidence: 99%

On the role of graphite in ultrananocrystalline diamond films used for electron field emitter applications

Kurian

Sankaran

Lin

2014

Physica Status Solidi (a)

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This Feature Article gives an account of the different pieces of work conducted by various groups around the world aimed at constituting a single model explaining the enhancement of conductivity and electron field emission properties in diamond. The scope of the presence of graphite phase or the evolution of intermediate energy levels within the band gap or defects in the diamond phase being causes of such enhancement has been explored by various groups. Along with this we present the studies performed by our group, the enhancement of the field emission and conductivity employing different approaches like ion irradiation, ion implantation, ion doping in the plasma or formation of composite films. From our studies we reveal that such modifications of properties are related to microstructural alterations. The prominent change observed, and contributing to this enhancement, is the increase in the grain boundaries, with sp2 graphitic phases residing in them. The effect of n‐ or p‐type doing into diamond is ruled out. The betterment of the field emission and conductivity is attributed to the interconnected sp2 phases within the grain boundaries, which form itineraries for electrons to traverse through the material.

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Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition

Cited by 59 publications

References 25 publications

An artificial carbon nano-thorn synthesized by a plasma chemical vapour deposition

An artificial carbon nano-thorn synthesized by a plasma chemical vapour deposition

Theoretical models for doping diamond for semiconductor applications

On the role of graphite in ultrananocrystalline diamond films used for electron field emitter applications

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