“…For hexagonal polytypes (4H and 6H-SiC) this problem was (partially) solved basing on the sitecompetition principle, reported by Larkin et al [1]; since the nitrogen incorporates in the sites of carbon sublattice, the decrease of unintentional doping of the layer down to 10 14 cm À3 is possible by raising the supply of carbon-containing species. Since then, numerous studies reported the influence of the chemical vapor deposition (CVD) growth conditions on doping of layers grown on different crystalline faces of 4H-and 6H-SiC [2][3][4][5][6][7]. The experimental results, sometimes contradictory, were obtained on different types of CVD systems (horizontal/vertical/barrel, hot/ cold wall, etc.)…”