Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10−9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

Epitaxial graphene films grown on silicon carbide ͑SiC͒ substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC͑111͒/Si͑111͒ substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene ͑FLG͒ surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples.

We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000–1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6√3 × 6√3)-R30° reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

We study the impact of the nucleation step on the final crystalline quality of 3C-SiC heteroepitaxial films grown on (111) and (100) oriented silicon substrates by low pressure chemical vapor deposition. The evolution of both the structural and morphological properties of 3C-SiC epilayers in dependence on the only nucleation parameters (propane flow rate and duration of the process) are investigated by means of x-ray diffraction, scanning electron, atomic force, and optical microscopies. At first, we show how the formation of interfacial voids is controlled by the experimental parameters, as previously reported, and we correlate the density of voids with the substrate sealing by using an analytical model developed by V. Cimalla et al. [Mater. Sci. Eng., B 46, 190 (1997)]. We show that the nucleation stage produces a more dense buffer layer in case of (111) substrates. Further, we investigate the impact of the nucleation parameters on the crystalline quality of 3C-SiC epilayers. Within our experimental setup, the crystalline quality of (100) oriented 3C-SiC films is more rapidly evolving than (111) films for low propane contents (0.025%–0.05% in hydrogen), whereas a common degradation of the crystalline quality is reported for both cases for the higher propane contents. In parallel, we investigate the morphological features of the epilayers. The (111) oriented epilayers are well coalesced irrespectively of the nucleation condition, contrarily to the (100) films. Finally, for both orientations we report on the dependence of the formation of double positioning domains (twins) on the nucleation conditions. Such defects can be suppressed within (111) films but not within (100) films. We highlight the role of the substrate sealing and discuss in what extent it can be responsible of the observations by reducing the contribution of the silicon outdiffusing and by allowing a more pronounced two-dimensional growth mode for (111) oriented 3C-SiC films.