Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6√3 × 6√3)-R30° reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

While the integration of graphene on semiconductor surfaces is important to develop new applications, epitaxial graphene has only been integrated on SiC substrates or 3C-SiC/Si templates. In this work, we explore the possibility of growing graphene on AlN/Si(111) templates. Using a chemical vapor deposition process with propane as the carbon source, we have obtained graphitic films (from 2 to 10 graphene layers) on AlN/Si(111) while preserving the morphology of the AlN layer beneath the graphitic film. This study is an important step for the integration of graphene with semiconductors other than SiC

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Graphene growth on SiC using propane‐hydrogen CVD has been recently demonstrated. In contrast to the annealing method, in‐plane rotational disorder of graphene can be observed on SiC(0001). In this contribution, we study the effects of growth temperature on the interface between graphene and SiC. We show that growth temperature allows to control the formation of graphene with in‐plane disorder or graphene on a (6√3×6√3)‐R30° interface. Accordingly, grazing incidence X‐ray diffraction evidences an effect of growth temperature on in‐plane strain. These results are discussed on the basis of the hydrogenation of the SiC surface. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6Ö3´6Ö3)-30° interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.