Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Michon, A.; Tiberj, Antoine; Vézian, S.; Roudon, E.; Lefebvre, Denis; Portail, Marc; Zieliński, Marcin; Chassagne, Thierry; Camassel, Jean; Cordier, Y.

doi:10.1063/1.4866285

Cited by 20 publications

(24 citation statements)

References 39 publications

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“…Gr deposition on these non-catalytic surfaces represents a challenging task, as it requires significantly higher temperatures as compared to conventional deposition on metals. The first experimental works addressing this issue showed the possibility of depositing a few layers of Gr both on bulk AlN (Al and N face) and on AlN templates grown on different substrates, such as Si (111) and SiC, at temperatures >1250 • C using propane (C 3 H 8 ) as the carbon source, without significantly degrading the morphology of AlN substrates/templates [119,120]. In spite of the very promising results of these experiments, further work will be required to evaluate the feasibility and the effects of CVD Gr growth onto AlN/GaN or AlGaN/GaN heterostructures.…”

Section: Materials Science Issues and Challengesmentioning

confidence: 99%

Vertical Transistors Based on 2D Materials: Status and Prospects

et al. 2018

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Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the implementation of vertical transistors for digital and high-frequency electronics. This paper reviews recent developments in this field, presenting the main vertical device architectures based on 2D/2D or 2D/3D material heterostructures proposed so far. For each of them, the working principles and the targeted application field are discussed. In particular, tunneling field effect transistors (TFETs) for beyond-CMOS low power digital applications are presented, including resonant tunneling transistors based on Gr/h-BN/Gr stacks and band-to-band tunneling transistors based on heterojunctions of different semiconductor layered materials. Furthermore, recent experimental work on the implementation of the hot electron transistor (HET) with the Gr base is reviewed, due to the predicted potential of this device for ultra-high frequency operation in the THz range. Finally, the material sciences issues and the open challenges for the realization of 2D material-based vertical transistors at a large scale for future industrial applications are discussed.

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Section: Materials Science Issues and Challengesmentioning

confidence: 99%

Vertical Transistors Based on 2D Materials: Status and Prospects

et al. 2018

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“…In this case, propane served as the precursor and, as found with a number of non‐metal catalysts, temperature is relevant in terms of the graphene quality, such that it improves as the temperature increases. In this case, 1350 °C was needed for high quality graphene 68…”

Section: Substrate Systems For Graphene Synthesis By Cvdmentioning

confidence: 99%

Substrate Developments for the Chemical Vapor Deposition Synthesis of Graphene

Shi

Tokarska

et al. 2020

Adv Materials Inter

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Since the isolation of graphene and numerous demonstrations of its unique properties, the expectations for this material to be implemented in many future commercial applications have been enormous. However, to date, challenges still remain. One of the key challenges is the fabrication of graphene in a manner that satisfies processing requirements. While transfer of graphene can be used, this tends to damage or contaminate it, which degrades its performance. Hence, there is an important drive to grow graphene directly over a number of technologically important materials, viz., different substrate materials, so as to avoid the need for transfer. One of the more successful approaches to synthesis graphene is chemical vapor deposition (CVD), which is well established. Historically, transition metal substrates are used due to their catalytic properties. However, in recent years this has developed to include many nonmetal substrate systems. Moreover, both solid and molten substrate forms have also been demonstrated. In addition, the current trend to progress flexible devices has spurred interest in graphene growth directly over flexible materials surfaces. All these aspects are presented in this review which presents the developments in available substrates for graphene fabrication by CVD, with a focus primarily on large area graphene.

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“…AlN, GaN or InN) in between metal and graphene layer [12][13][14]. From the experimental point of view, the graphene layer can be grown directly over the wurtzite nitrides [15,16]. Recently, Jewett et al reported experimentally that GaN can be used to detect bio-elements like hexylamine and peptide [17].…”

Section: Introductionmentioning

confidence: 99%