Homogeneous and inhomogeneous magnetic oxide semiconductors*

Abstract

Magnetic oxide semiconductors are significant spintronics materials. In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors. In the homogeneous magnetic oxide semiconductors, we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping, and even un-doping to realize homogeneous substitution and the clear magnetic origin. And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties. In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices. And the related mechanisms are discussed in details. Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.

Investigation of the magnetoresistance in EuS/Nb:SrTiO3 junction*

“…The reason of the enhancement of the T c maybe associated with indirect exchange through additional charge carriers, which are created at the interface between EuS film and Nb:STO. [20,22,25,26] The I-V characteristics of the Pt/EuS/Nb:STO/Pt tunneling junctions recorded in zero applied field at various temperatures is shown in Fig. 3(a).…”

Morphology-Dependent Room-Temperature Ferromagnetism in Undoped ZnO Nanostructures

“…Since it was predicted based on the Zener model that Co-doped ZnO could exhibit RTFM [22], researchers have gradually focused on transition metal-doped ZnO systems. As an overview of the many publications on doped ZnO with RTFM, some review articles [4,6,[23][24][25][26][27][28][29][30][31][32][33] are presented in Table 1.…”

Oxygen vacancy control of electrical, optical, and magnetic properties of Fe0.05Ti0.95O2 epitaxial films*

“…Dilute magnetic semiconductors (DMSs) have been extensively studied in the past decades, because they provide a promising method to inject spin polarized carriers into non-magnetic semiconductors. [1][2][3][4][5][6][7][8][9][10][11] The strong interaction between carriers and transition metal dopants enables synergetic use of both charge and spin degrees of freedom in one substance, which provides potential applications in spindependent electronics. [12][13][14][15][16][17][18][19] However, practical spintronic devices require DMS to have high Curie temperature (above room temperature (RT)), high spin polarization, intrinsic ferromagnetic origin and compatibility with semiconductor techniques.…”