Homogeneous Field Emission Cathodes With Precisely Adjustable Geometry Fabricated by Silicon Technology

Dams, Florian; Navitski, A.; Prommesberger, C.; Serbun, P.; Langer, Christoph; Müller, Günter; Schreiner, Rupert

doi:10.1109/ted.2012.2206598

Cited by 43 publications

(16 citation statements)

References 28 publications

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“…Reactive ion etching and sharpening oxidation techniques were used to fabricate arrays of conical-shaped p-type silicon tips. [13] The array had 1024 tips with a square arrangement and a pitch of 50 μm (Figure 1a). Each tip had a width and a height of 4 μm and an apex radius of about 30 nm.…”

Section: Methodsmentioning

confidence: 99%

A Comparative Study of Field Emission From Pristine, Ion‐Treated and Tungsten Nanoparticle‐Decorated p‐Type Silicon Tips

Kleshch

Serbun

Lützenkirchen‐Hecht

et al. 2019

Physica Status Solidi (b)

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The field electron emission characteristics of individual tips of a silicon field emitter array are analyzed. The array of conical‐shaped tips is fabricated on a p‐type silicon wafer by using reactive ion etching and sharpening oxidation. The tips are decorated with single tungsten nanoparticles at their apexes. Furthermore, the focused ion beam is also used to increase surface conductivity of some of the tips. Comparative measurements of field emission are performed by using the scanning anode probe field emission microscopy technique. All types of tips demonstrated emission activation consisting of a sudden current increase at a certain value of the applied voltage. Compared to the pristine tips, a noticeable reduction of the saturation effect in the current–voltage characteristics and a smaller light sensitivity for the decorated tips is found. For ion‐treated tips, saturation effects and light sensitivity are completely suppressed. Scanning electron microscopy observations reveal the formation of single nanoscale protrusions extending from the metal particles and from the apexes of bare ion‐treated tips after exposure under strong electric fields during the field emission measurements. The influence of protrusions growth on characteristics of silicon field emitter arrays is discussed.

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Section: Methodsmentioning

confidence: 99%

A Comparative Study of Field Emission From Pristine, Ion‐Treated and Tungsten Nanoparticle‐Decorated p‐Type Silicon Tips

Kleshch

Serbun

Lützenkirchen‐Hecht

et al. 2019

Physica Status Solidi (b)

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“…The array of Si tips was fabricated by a standard method. 42 Each Si tip was 500 nm high, and the tip angle at the end of the tips was about 30°, with the tip curvature radius being 10 nm. The tips in the array were spaced by a distance of 2-3 μm (different separations in different directions).…”

Section: An Ordered Array Of Vo 2 Ncs With Embedded Tipsmentioning

confidence: 99%

A new approach to the fabrication of VO₂ nanoswitches with ultra-low energy consumption

et al. 2020

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“…10. 10 The RF-Power was set to 120 W. Due to the limitation of the tip height by the residual tip diameter after dry etching, higher anisotropy allows longer etch times and thus larger tip heights H. Furthermore, high anisotropy results in rather sharp tips due to an aperture angle close to 0 [ Fig. 2.…”

Section: Fabrication Technologymentioning

confidence: 99%

“…However, the homogeneity of most actual field emission (FE) cathodes, including carbon, metallic, or semiconducting nanostructures, and the emission stability of their individual emitters are still limited by fabrication difficulties leading to great variations in the field enhancement and current carrying capability. 10 Most attractive for stable but fast-switchable cold electron sources are p-type Si tip arrays. Recently, we demonstrated that our advanced Si-based microelectronics fabrication technology might be suitable to fulfill these specific requirements.…”

Section: Introductionmentioning

confidence: 99%

Stable field emission of single B-doped Si tips and linear current scaling of uniform tip arrays for integrated vacuum microelectronic devices

Serbun

Bornmann

Navitski

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inEffect of ballast-resistor and field-screening on electron-emission from nanodiamond emitters fabricated on micropatterned silicon pillar arrays Enhanced electron-field emission from nanodiamond ridge-structured emission arrays capped on micropatterned silicon pillars Advanced Si-based semiconductor technology is most suitable to fabricate uniform nanostructures as integrated field emitter arrays for novel vacuum electronic devices. In order to improve the field emission homogeneity and stability of p-type silicon tip arrays for pulsed sensor applications, the authors have systematically studied the influence of the fabrication parameters on the tip shape and on the specific operating conditions. Based on detailed design calculations of the field enhancement, they have fabricated two series of hexagonal arrays of B-doped Si-tips in a triangular arrangement. The first (second) type contains three (four) patches with different number of tips (1, 91, 547 and 1, 19, 1027, 4447 for the first and second type, respectively) of about 1 (2.5) lm height, $20 (20) nm apex radius, and 20 (10) lm pitch. The field emission properties of both individual tips and complete arrays were investigated with a field emission scanning microscope at a pressure of 10 À9 mbar. The current plateau of these tips typically occurs at about 10 (3) nA and around 65 (25) V/lm field level. In this carrier saturation range, single tips provide the highest current stability (<5%) and optical current switching ratio ($2.5). Fairly homogeneous emission of the tip arrays leads to an undershooting of the expected linear scaling of the mean plateau current as well as to a much improved current stability (<1%).

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Homogeneous Field Emission Cathodes With Precisely Adjustable Geometry Fabricated by Silicon Technology

Cited by 43 publications

References 28 publications

A Comparative Study of Field Emission From Pristine, Ion‐Treated and Tungsten Nanoparticle‐Decorated p‐Type Silicon Tips

A Comparative Study of Field Emission From Pristine, Ion‐Treated and Tungsten Nanoparticle‐Decorated p‐Type Silicon Tips

A new approach to the fabrication of VO₂ nanoswitches with ultra-low energy consumption

Stable field emission of single B-doped Si tips and linear current scaling of uniform tip arrays for integrated vacuum microelectronic devices

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Homogeneous Field Emission Cathodes With Precisely Adjustable Geometry Fabricated by Silicon Technology

Cited by 43 publications

References 28 publications

A Comparative Study of Field Emission From Pristine, Ion‐Treated and Tungsten Nanoparticle‐Decorated p‐Type Silicon Tips

A Comparative Study of Field Emission From Pristine, Ion‐Treated and Tungsten Nanoparticle‐Decorated p‐Type Silicon Tips

A new approach to the fabrication of VO2 nanoswitches with ultra-low energy consumption

Stable field emission of single B-doped Si tips and linear current scaling of uniform tip arrays for integrated vacuum microelectronic devices

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A new approach to the fabrication of VO₂ nanoswitches with ultra-low energy consumption