Solid-State Electronics

2005

DOI: 10.1016/j.sse.2005.03.010

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Hooge noise parameter of epitaxial n-GaN on sapphire

Nobuhisa Tanuma¹,

Munecazu Tacano²,

et al.

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експериментальні результати1

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Cited by 8 publications

(1 citation statement)

References 27 publications

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“…Для отримання положення енергетичних рівнів, лоренціани які лежать в області низьких частот спектральну густину шуму, представлено у коор- [9]. Тривалості часів життя носіїв τ і оцінені по частоті спаду f 0i даної амплітуди A i для і-того рекомбінаційного рівня відповідно.…”

Section: експериментальні результатиunclassified

Noise and transport properties of CdTe <Pb> crystals

Virt¹,

Парфенюк³

et al. 2012

Electronics and Communications

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“…Для отримання положення енергетичних рівнів, лоренціани які лежать в області низьких частот спектральну густину шуму, представлено у коор- [9]. Тривалості часів життя носіїв τ і оцінені по частоті спаду f 0i даної амплітуди A i для і-того рекомбінаційного рівня відповідно.…”

Section: експериментальні результатиunclassified

Noise and transport properties of CdTe <Pb> crystals

Virt¹,

Парфенюк³

et al. 2012

Electronics and Communications

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No abstract

Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies

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2022

Advanced Materials

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Figure 1. Schematic of coupling between the state vector ψ, control field 0 E and TLS of amplitude b , causing the state to randomly fluctuate between ± 0 E b , with a switching rate γ.

Structural and optical properties of β-Ga2O3 films deposited on MgAl2O4 (1 0 0) substrates by metal–organic chemical vapor deposition

¹

,

²

,

³

et al. 2014

Journal of Luminescence

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No abstract

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