The results of experimental investigation of structural and physical properties of ZnO and ZnMnO films are presented in this work. The films of ZnO and Zn1−xMnxO of different thickness were obtained on Al2O3, glass, and KCl substrates in vacuum of 1 × 10 −5 Torr by the pulsed laser deposition method. The samples were obtained under the substrate temperature 300-473 K. A thickness of films was in the range of 0.5-1 µm depending on the number of laser pulses. The structure of target bulk materials was investigated by X-ray diffraction method. A structure of laser deposited films was investigated by the transmission high-energy electron diffraction method. Electric resistivity was measured in the temperature range 77-450 K. The presence of two activation energies in the temperature range 300-330 K and 330-450 K is followed from the analysis of the films electrical resistivity. These activation energies correspond to two deep donor's energy levels. The shallow donor's level is connected with manganese presence. Optical transmission of ZnO and ZnMnO films deposited at various temperatures were investigated.

Two types of cadmium telluride single crystals were investigated: undoped CdTe grown by Bridgeman method and highly doped CdTe:Cl obtained by STHM. Photoconductivity properties of CdTe crystals were studied by the transient photoconductivity method. Persistent photo response due to the polarization effect was revealed in undoped samples. Noise spectra have been measured over a wide range of frequencies, from below 1 Hz up to 1 MHz, and for voltages applied the samples from 0 up to 200 V. Two type of noise dominates in the range of voltages and frequencies under investigation, namely excess 1/f noise and generation-recombination (G-R) noise. Two-phase model were applied to explain noise experimental results, which consider the presence of precipitates.

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