Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation

Abstract

The results of experimental investigation of structural and physical properties of ZnO and ZnMnO films are presented in this work. The films of ZnO and Zn1−xMnxO of different thickness were obtained on Al2O3, glass, and KCl substrates in vacuum of 1 × 10 −5 Torr by the pulsed laser deposition method. The samples were obtained under the substrate temperature 300-473 K. A thickness of films was in the range of 0.5-1 µm depending on the number of laser pulses. The structure of target bulk materials was investigated by X-ray diffraction method. A structure of laser deposited films was investigated by the transmission high-energy electron diffraction method. Electric resistivity was measured in the temperature range 77-450 K. The presence of two activation energies in the temperature range 300-330 K and 330-450 K is followed from the analysis of the films electrical resistivity. These activation energies correspond to two deep donor's energy levels. The shallow donor's level is connected with manganese presence. Optical transmission of ZnO and ZnMnO films deposited at various temperatures were investigated.

Reduction in Absorption Edge of the Digital-Alloyed ZnMnO Thin Films Grown Using Atomic Layer Deposition

“…The reduction in bandgap energy of ZnMnO samples compared to that of the pure ZnO (measured at 3.30 eV) and MnO (reported at ∼3.5 eV) 32,33 is in accordance with other reports, in which values as low as 2.1 and 0.72 eV for the thin films with Mn 3% and 8% at were observed. 17,34 However, these results are in contrast with other reports elsewhere regarding growth of ZnMnO thin films, in which a linear increase in the bandgap energy of ZnMnO up to 3.45 eV for Mn 8% at was observed by increasing the Mn dopant concentration. [35][36][37] In both cases, the change in the bandgap energy of ZnMnO is mainly attributed to the following two factors: (1) charge transfer transition between the band edge continuum of ZnO and the Mn-related donor and acceptor ionization levels, and (2) intrashell transitions inside the Mn 2+ ions.…”

Optical properties of ZnO:TM (TM = Cr, Mn and Co) layers obtained by pulsed laser deposition technique

“…Zinc oxide belonging to II-IV semiconductor materials exhibits many favourable properties, such as wide bandgap (~ 3.3 eV), high exciton binding energy (~ 60 meV) and high chemical stability. Moreover, it is abundant in nature, non-toxic and environmentally friendly, while its growth requires low cost [1][2][3][4][5]. Over the last decades, zinc oxide has been extensively investigated with the purpose of its utilization in various industries and technologies.…”

Effect of Laser Pulses and Energy on the Structural Properties of ZnO Thin Film Prepared Using PLA Technique

“…They revealed that there are strong in fluency of parameters such as, laser power, ablation time, and aging [7]. In (2010), Virt, et al studied the properties of ZnO and ZnMnO thin films prepared by (PLA) that have polycrystalline behavior with average sizes of particles of ZnMnO film 2 of 10 at 300 K and at 473 K were 50 Å and 400 Å, respectively [8]. In (2011), Raid, et al synthesized ZnO by (PLA) in double distilled water with various laser fluencies at RT.…”