2011
DOI: 10.1126/science.1211384
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Hot Carrier–Assisted Intrinsic Photoresponse in Graphene

Abstract: We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intr… Show more

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Cited by 951 publications
(1,192 citation statements)
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“…The interference between surface plasmon polaritons and the incident wave introduces new functionalities, such as light flux attraction or repulsion from the contact edges, enabling the tailored design of the photodetector's spectral response. This architecture can also be used for surface plasmon bio-sensing with direct-electricreadout, eliminating the need of complicated optics.Graphene-based photodetectors (PDs) [1,2] have been reported with ultra-fast operating speeds (up to 262GHz from the measured intrinsic response time of graphene carriers [3]) and broadband operation from the visible and infrared [3][4][5][6][7][8][9][10][11][12][13][14][15][16] up to the THz [17][18][19]. The simplest graphene-based photodetection scheme relies on the metal-graphene-metal (MGM) architecture [5,7,8,11,[20][21][22], where the photoresponse is due to a combination of photo-thermoelectric and photovoltaic effects [5,7,8,11,[20][21][22].…”
mentioning
confidence: 99%
“…The interference between surface plasmon polaritons and the incident wave introduces new functionalities, such as light flux attraction or repulsion from the contact edges, enabling the tailored design of the photodetector's spectral response. This architecture can also be used for surface plasmon bio-sensing with direct-electricreadout, eliminating the need of complicated optics.Graphene-based photodetectors (PDs) [1,2] have been reported with ultra-fast operating speeds (up to 262GHz from the measured intrinsic response time of graphene carriers [3]) and broadband operation from the visible and infrared [3][4][5][6][7][8][9][10][11][12][13][14][15][16] up to the THz [17][18][19]. The simplest graphene-based photodetection scheme relies on the metal-graphene-metal (MGM) architecture [5,7,8,11,[20][21][22], where the photoresponse is due to a combination of photo-thermoelectric and photovoltaic effects [5,7,8,11,[20][21][22].…”
mentioning
confidence: 99%
“…To this end, we can take advantage of the excellent optical and electronic properties of graphene 9 , which include good photodetection capabilities 8,[10][11][12][13][14][15] , efficient energy absorption 3 and strong light-matter interactions at the nanoscale 16,17 . In particular, it has been reported recently that, because of graphene's specific properties, the near-field interaction between light emitters and graphene is greatly enhanced as compared to that of conventional metals [2][3][4][5][6] .…”
mentioning
confidence: 99%
“…We can isolate a dephasing rate of ~ (5 fs) -1 from excitonphonon coupling and a decay rate of ~ (10 fs) -1 from exciton-electron coupling at doping level of ~0.45 e/nm. Such knowledge on ultrafast relaxation will be important for optoelectronic applications employing hot electrons in carbon nanotube and graphene 29,30 .…”
mentioning
confidence: 99%