Hot-carrier induced dielectric breakdown (HCIDB) challenges of a new high performance LDMOS generation

Schlunder, C.; Heinrigs, W.; Landgraf, E.; Aresu, Stefano; Feick, H.; Röhner, M.; Gustin, Wolfgang; Dahl, C.

doi:10.1109/irps.2014.6861192

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2014

2018

Publication Types

Select...

Article2

Other1

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On this PLDMOS the thick gate oxide protected the device from possible hard oxide breakdown and no gate leakage could be observed. A possible correlation between dielectric breakdown and hot carrier injection for thinner gate oxide (5 nm) has been proposed in [8,9], but still there is no clear evidence that the two effects can be correlated to each other with a common degradation model.…”

Section: Introductionmentioning

confidence: 99%