Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation

Physical Limitations of Semiconductor Devices

“…This process has numerous peculiarities [265][266][267][268], but is usually referred to as hot carrier degradation. This process has numerous peculiarities [265][266][267][268], but is usually referred to as hot carrier degradation.…”

Automated MOS Transistor Gamma Degradation Measurements Based on LabVIEW Environment

“…A major concern in the reliability of metal-oxide-semiconductor field effect transistor (MOSFET) devices is the formation of interface traps and near-interface oxide traps; called also border traps; under hot carrier injection, irradiation and processing. Traps at or near the semiconductor/gate dielectric interface can cause degraded transconductance (Doyle et al, 1990), the shifting of threshold voltage (Tsuchiya et al, 1987) and may lead to dielectric breakdown (Chen et al, 1985). In order to improve the resistance of MOSFET devices to these effects, it is necessary to have a reliable method of determining the densities of both interface traps and oxide traps (Djezzar et al, 2004).…”

Relaxable Damage in Hot‐Carrier Stressing of n‐MOS Transistors

“…corresponding device degradation [1,2]. The hot-cartier effect results from the high fields in the drain region of the transistor due to applied voltages and leads to a degradation in the transconductance (and/or a shift in the threshold voltage) and a decrease in the post-threshold drain current.…”