Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)

Farmakis, Filippos; Dimitriadis, C. A.; Brini, J.; Kamarinos, G.; Gueorguiev, V.K.; Ivanov, Tzvetan

doi:10.1016/s0038-1101(99)00065-9

Cited by 22 publications

(17 citation statements)

References 19 publications

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“…I off increases distinctly, whereas negligible change occurs in I on . Similar transfer curve degradation was also seen in other high temperature processed TFTs under similar low V g HC stress condition [9]. Shown in Fig.8 are CP curves similarly measured by optimized CP technique as in SH degradation.…”

Section: Hc Degradationsupporting

confidence: 77%

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

Wang

Sun

et al. 2010

2010 IEEE International Reliability Physics Symposium

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Self-heating (SH) and hot carrier (HC) degradation of n-type poly-Si thin-film transistors (TFTs) is evaluated by using charge pumping (CP) technique. By extracting trap state energy distribution, it is demonstrated that SH degradation is mainly attributed to the generation of deep states. For HC stressed TFTs, an anomalous I CP decrease with the stress time is observed in a low V g stress condition controlled by hole trapping; while in a mid V g condition, CP signal clearly indicates the trap states generation controlled by electron trapping.

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Section: Hc Degradationsupporting

confidence: 77%

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

Wang

Sun

et al. 2010

2010 IEEE International Reliability Physics Symposium

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“…It lends further support to the hypothesis that the normal degradation occurs by stress-induced defect generation by breaking/distorting of strong Si-Si bonds. Therefore, the carrier trapping mechanism [12], [28], [29] previously proposed to explain the turnaround degradation behavior seems to be not a controlling mechanism in the current observation.…”

Section: Two-stage Degradation Characteristicsmentioning

confidence: 51%

“…In HC two-stage degradation, the initial V th backshift is accompanied by a g m_ max increase as a result of the channel shortening effect [10], [12]. In our observation, the lack of initial g m_ max increase implies a different underlying mechanism.…”

Section: Two-stage Degradation Characteristicsmentioning

confidence: 64%

“…In poly-Si TFTs, µ FE or g m_ max degradation was commonly observed in HC degradation [5], [10]- [12]. Previously, there were observations of an initial increase in µ FE or g m_ max under HC stress due to the channel shortening effect by HC injection into the gate oxide at the drain end [10], [12], [13]. However, to our knowledge, continuous µ FE or g m_ max increase in poly-Si TFTs upon SH stress was not previously reported.…”

Section: B Anomalous Field-effect Mobility Degradationmentioning

confidence: 99%

“…Kouvatsos and Davazoglou [28] observed V th turnaround on solid-phase crystallization poly-Si TFTs stressed by high V g bias with/without a low V d bias and explained the initial V th backshift by hole trapping of preexisting oxide and interface traps via a mechanism of electron tunneling out of neutral oxide traps [29]. In HC degradation, Farmakis et al [12] proposed that hot hole injection followed by hot electron injection can account for such V th turnaround effect.…”

Section: Two-stage Degradation Characteristicsmentioning

confidence: 99%

See 2 more Smart Citations

Stress Power Dependent Self-Heating Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors

Wang

Yang

et al. 2007

IEEE Trans. Electron Devices

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Abstract-Self-heating degradation of n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors is systematically investigated under various stress powers. A two-stage degradation behavior with turnaround effect at the initial stage is characterized. The initial degradation stage is related to breaking of weak Si-H bonds. The floating-body effect by released hydrogen ions is responsible for the observed backshift of the transfer curve during the initial stress. On the other hand, the normal degradation stage occurs by breaking of strong Si-Si bonds and trap generation at grain boundaries (GBs) and the gate oxide/channel interface. Our model is supported by observed different activation energies related to two degradation stages and a direct observation of the continuous increase in GB trap density during the normal degradation. Furthermore, during the normal degradation stage, an anomalous continuous field-effect mobility increase along with its V g dependence shift is first observed. It is clarified that this behavior is not a true channel mobility increase, but a consequence of stress-related trap generation.Index Terms-Field-effect mobility, metal-induced lateral crystallization, polycrystalline silicon (poly-Si), self-heating (SH) degradation, thin-film transistors (TFTs).

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Low-Frequency noise spectroscopy for characterization of polycrystalline semiconductor thin films and polysilicon thin film transistors

Dimitriadis

Kamarinos²

2002

Handbook of Thin Films

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Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)

Cited by 22 publications

References 19 publications

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

Evaluation of self-heating and hot carrier degradation of poly-Si thin-film transistors using charge pumping technique

Stress Power Dependent Self-Heating Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors

Low-Frequency noise spectroscopy for characterization of polycrystalline semiconductor thin films and polysilicon thin film transistors

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