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The anamalous initial regime of silicon dry oxidation is properly demonstrated using derivative plots of experimental data. The proposed analysis, based on the physical Grove–Deal approach, infers that this initial regime cannot be explained either by an enhanced diffusivity of the oxidizing species near the Si-SiO2 interface as previously advanced, or by the chemical model of Blanc. In contrast it is shown that the diffusion through the first hundreds of Å of the oxide layer is slowed down. It is suggested that this lower diffusivity is due to compressive stresses in the growing silica.

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The low frequency noise technique is used to obtain the volume profile of traps in the SiNx gate dielectric of hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs). In both a-Si:H and nc-Si:H TFTs, within the range of probing depth in the gate dielectric, the traps have a uniform spatial distribution which is consistent with the observed pure 1/f noise. The experimental results show that the gate dielectric trap properties near the interface are dependent on the channel material with the trap density in nc-Si:H TFTs being much smaller in comparison with the a-Si:H TFTs.