Hot-electron currents in deep-submicrometer MOSFETs

Chung, J.E.; Jeng, Min-Chie; May, G.; Ko, P.K.; Hu, C.

doi:10.1109/iedm.1988.32790

Cited by 26 publications

(8 citation statements)

References 5 publications

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“…Using quasi-two-dimensional analysis, the maximum lateral electric field at the drain can be modeled as E,,, = ( VDr,,, -VD SAT)//O [23] where the quantity 1, is a characteristic length of the lateral electric field and is a function of channel length, oxide thickness, and junction depth. This electric field model has been shown to be valid for devices with Lclt as small as 0.2 pm [24]. Fig.…”

Section: Anlf [B E-jl*l~/kt< Oc E-ii*u/ktcmentioning

confidence: 90%

Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs

Chung

Jeng

Moon

et al. 1990

IEEE Trans. Electron Devices

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= 7.5 nm, substrate current is measured at a drain bias as low as 0.7 V; gate current is measured at a drain bia5 as low as 1.75 V. Using the charge-pumping technique, hot-electron degradation is also observed as drain biases as low as 1.8 V. These voltages are believed to be the lowest repnrted values for which hotelectron currents and degradation have been directly observed. These low-voltage hot-electron phenomena exhibit similar behavior to hotelectron effects present at higher biases and longer channel lengths. N o critical voltage for hot-electron effects (such as the Si-Si02 barrier height) is apparent. Established hot-electron degradation concepts and models are shown to be applicable in the low-voltage deep submicrometer regime. Using these established models, the maximum allowable power supply voltage to insure a 10-year device lifetime is determined as a function of channel length (down to 0.15 am) and oxide thicknesses.

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Section: Anlf [B E-jl*l~/kt< Oc E-ii*u/ktcmentioning

confidence: 90%

Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs

Chung

Jeng

Moon

et al. 1990

IEEE Trans. Electron Devices

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“…However, (7.4) is clearly not sufficient for all operating regions. The equation that we use for lucky-electron injection, shown below in (7.8), comes from [160]; here we summarize the elements that make up the equation. The form of the luckyelectron equation is [154]…”

Section: Injection Parameterizationmentioning

confidence: 99%

“…where γ and δ are fits that are invariant to the fabrication process and to the dimensions of the device, and E m is an approximation for the maximum field at the drain. The maximum field can be calculated as [160]…”

Section: Injection Parameterizationmentioning

confidence: 99%

“…where V sd,sat is the saturation voltage, V T 0 is the threshold voltage, and l is the length of the velocity saturation region near the drain, which can be calculated as [160]…”

Section: Injection Parameterizationmentioning

confidence: 99%

“…Injection can be modeled using [160] 11.9) where α = 9 and β = 80 are parametric fits for 0.35µm, and V T is the threshold voltage. A large V gd (≥4.5V) is necessary to achieve fast and efficient injection.…”

Section: Writing a Floating-gate Switchmentioning

confidence: 99%

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Low-Power and Programmable Analog Circuitry for Wireless Sensors

Rumberg¹

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Embedding networks of secure, wirelessly-connected sensors and actuators will help us to conscientiously manage our local and extended environments. One major challenge for this vision is to create networks of wireless sensor devices that provide maximal knowledge of their environment while using only the energy that is available within that environment. In this work, it is argued that the energy constraints in wireless sensor design are best addressed by incorporating analog signal processors. The low power-consumption of an analog signal processor allows persistent monitoring of multiple sensors while the device's analog-to-digital converter, microcontroller, and transceiver are all in sleep mode. This dissertation describes the development of analog signal processing integrated circuits for wireless sensor networks. Specific technology problems that are addressed include reconfigurable processing architectures for low-power sensing applications, as well as the development of reprogrammable biasing for analog circuits. iii Dedication To faculty and peers who have been so helpful, To family who won't try to read beyond this pageand more so to those who will, And to anyone who may benefit from this work. Contents Dedication iii List of Figures ix List of Tables xii Symbols and Acronyms xiii 12 Conclusions and Future Work 160 References 162 A Background on Sub-Threshold Analog Circuits 181 A.

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Modeling gate emissions: A review—Part I

Sanchez

DeMassa

1993

Microelectronic Engineering

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Hot-electron currents in deep-submicrometer MOSFETs

Cited by 26 publications

References 5 publications

Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs

Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs

Low-Power and Programmable Analog Circuitry for Wireless Sensors

Modeling gate emissions: A review—Part I

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