Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Bisi, Davide; Chini, Alessandro; Soci, Fabio; Stocco, Antonio; Meneghini, Matteo; Pantellini, A.; Nanni, Antonio; Lanzieri, C.; Gamarra, Piero; Lacam, C.; Tordjman, M.; diForte-Poisson, M.-A.; Meneghesso, Gaudenzio; Zanoni, Enrico

doi:10.1109/led.2015.2474116

Cited by 41 publications

(19 citation statements)

References 14 publications

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“…A larger drain voltage induces a higher electric field and, therefore, distributes surface charges more quickly [22]. The extracted t DG2 corresponds with that of other works [23], [24].…”

Section: B Slow Current Degradation -Dg2supporting

confidence: 83%

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Duffy

Benbakhti

Zhang

et al. 2020

IEEE Trans. Electron Devices

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A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I S ) and drain (I D ) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between I S and I D , a bulk charge trapping time constant is found to be independent of both drain (V DS ) and gate (V GS ) biases. Surface charge trapping is found to have a much greater impact on a slow degradation when compared to bulk trapping and self-heating. At a short timescale (< 1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (> 1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping.

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“…A larger drain voltage induces a higher electric field and, therefore, distributes surface charges more quickly [22]. The extracted t DG2 corresponds with that of other works [23], [24].…”

Section: B Slow Current Degradation -Dg2supporting

confidence: 83%

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Duffy

Benbakhti

Zhang

et al. 2020

IEEE Trans. Electron Devices

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“…It is important to note that no irreversible degradation was observed in any of the measurements or as a result of bias conditions applied during the experiments. Hence, the differences in buffer doping did not lead to the degradation as has been observed previously [28].…”

Section: Methodssupporting

confidence: 69%

Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

Hirshy

Singh

Casbon

et al. 2018

IEEE Trans. Electron Devices

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This paper evaluates the applicability of pulsed I-V measurements as a tool for accurately extracting nonlinear gallium nitride (GaN)-based heterojunction fieldeffect transistor (HFET) models. Two wafers with the identical layer structure but different growth conditions have been investigated. A series of I-V measurements was performed under dc and pulsed conditions demonstrating a dramatic difference in the kink effect and current collapse (knee walkout) suggesting different trapping behaviors. However, when radio frequency (RF) I-V waveform measurements, utilizing active harmonic load-pull, were used to study the impact of these traps on the RF performance, both wafers gave good overall RF performance with no significant difference observed. This absence of correlation between pulsed I-V measurement results and RF performance raises a question about the applicability of pulsed I-V measurements alone as a tool for extracting nonlinear device models in the case of GaN HFETs. Index Terms-Active harmonic load-pull, current collapse, gallium nitride (GaN), heterojunction field-effect transistor (HFET), high-electron mobility transistor, kink effect, knee walkout, pulsed I-V, trapping effect. I. INTRODUCTION D UE to the unique material properties of gallium nitride (GaN), particularly high-electron mobility, high break

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“…In other cases, new deep levels are formed or activated, and the degradation is detected only as an increase of current collapse or dispersion effects observed by means of double pulse measurements or current Deep Level Transient Spectroscopy [5], [6]. …”

Section: Degradationmentioning

confidence: 99%