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A novel implementation of a solar harvester circuit based on a boost DC/DC converter topology is presented. The proposed circuit is able to harvest solar energy down to a power level of 1.6 mW while maintaining comparable performance with previously presented results at higher power levels

Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility transistor employing different GaN buffer designs, including unintentional doping, carbon doping and iron doping. No signature of gate-edge degradation has been found, and good correlation emerges between the buffer composition, subthreshold leakage current, and permanent degradation of the RF performance. The degradation mechanism, more pronounced in devices with parasitic buffer conductivity, involves the generation of additional deep trap states, the worsening of the dynamic current collapse, and the subsequent degradation of RF output power

In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration