1996
DOI: 10.1006/spmi.1996.0074
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Hot electron effects in optically-pumped mid-infrared intersubband semiconductor laser

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Cited by 10 publications
(3 citation statements)
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References 9 publications
(20 reference statements)
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“…However, it should be noticed that eventual carrier heating effects resulting of intense pumping are not taken into account in this simple model. Separate calculations accouting for these effects show that the gain is effectively reduced at high pump intensities while remaining quite large [36]. Finally, assuming comparable losses as in the QC lasers [18], the effective gain, G CDD , required for lasing threshold would be of the order of 30 cm\.…”
mentioning
confidence: 93%
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“…However, it should be noticed that eventual carrier heating effects resulting of intense pumping are not taken into account in this simple model. Separate calculations accouting for these effects show that the gain is effectively reduced at high pump intensities while remaining quite large [36]. Finally, assuming comparable losses as in the QC lasers [18], the effective gain, G CDD , required for lasing threshold would be of the order of 30 cm\.…”
mentioning
confidence: 93%
“…Unlike for intersubband optical pumping, doping of the structures is not required. The population inversion term can be expressed as: elements show that 7.5;10\ [36]. As a result, population inversion is also achievable under band-to-band optical pumping.…”
mentioning
confidence: 99%
“…3͑b͒. Barrier phonon modes are usually ignored in device analysis 17 because they are comparatively small. However, even when small, the enhancement of the intersubband scattering rate due to barrier phonon modes can change the optical gain of a QCL heterostructure, as we see in Fig.…”
Section: ͑25͒mentioning
confidence: 99%