Hot electron effects on Al/sub 0.25/Ga/sub 0.75/As/GaAs power HFET's under off-state and on-state electrical stress conditions

Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown

“…Consequently, the nominal drain-gate (as well as the source-gate) distance is 2.15 m for the 0.7 m devices and 2.375 m for the 0. 25 Fig. 2 shows the output characteristics of both a 0.7 m and a 0.25 m HFET.…”

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

“…According to the literature, this stress is responsible of a positive shift of the threshold voltage, degradation of the transconductance and the drain current, increase of source and drain series resistance [32][33][34]. This is in total accordance with the increase of the knee voltage which could be attributed to the degradation of the ohmic contacts.…”

Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions

“…It is generally believed that a direct correlation exists between the breakdown voltage stability and the reliability [1]. Indeed, when the devices are operating close to breakdown, the MESFETs and PHEMTs might present degradations due to hot electrons [2,3,4,5,6,7,8]. Worse yet, device reliability for new applications is not predictable until extensive life tests are performed [3].…”