1994
DOI: 10.1063/1.357420
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Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors

Abstract: Redistribution of hydrogen caused by hot-electron injection has been studied by hydrogen depth profiling with 15N nuclear reaction analysis and electrical methods. Internal photoemission and Fowler–Nordheim injection were used for electron injection into large Al-gate and polysilicon-gate capacitors, respectively. A hydrogen-rich layer (∼1015 atoms/cm2) observed at the Al/SiO2 interface was found to serve as the source of hydrogen during the hot-electron stress. A small fraction of the hydrogen released from t… Show more

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Cited by 91 publications
(33 citation statements)
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“…The increase in the voltage during the high-field electron injection suggests negative charge trapping in the oxide volume at the distance more than the tunneling length from injected SiO 2 -Si interface. 8 It is worth noting that the measurement characteristics show only negative charge trapping in the oxide during the measurement cycle.…”
mentioning
confidence: 99%
“…The increase in the voltage during the high-field electron injection suggests negative charge trapping in the oxide volume at the distance more than the tunneling length from injected SiO 2 -Si interface. 8 It is worth noting that the measurement characteristics show only negative charge trapping in the oxide during the measurement cycle.…”
mentioning
confidence: 99%
“…Namely, each curve contains n = 128 very closed points (n time intervals), which touch each other, and the error bars would be overlapped (see Figs. [6][7][8][9][10][11]. It should be noted that the relative deviation from mean value (in percentages), d ij (i = 1,n; j = 1,k), obtained as d ij ¼ ðx ij À x i Þ= x i  100 is in the range of ±2.5%, where x ij is the jth value of given variable x at the ith time interval, and x i ¼ ð1=kÞ P k j¼1 x ij is the mean value at ith time interval.…”
Section: Methodsmentioning
confidence: 99%
“…The defects at SiO 2 /Si interface (in the following text only 'interface'), known as fast switching traps, FST, or true interface traps, true IT, [17]) can be created directly by hot electrons tunnelling from substrate or gate [26,9], by trapped holes (h + model) [27][28][29][30] and by hydrogen released in the oxide (hydrogen-related species model-H model) [31][32][33][34]. The FST represents an amphoteric defect Si 3 BSi s : a silicon atom BSi s at the SiO 2 /Si interface back bonded to three silicon atoms from substrate "Si 3 , and FST is usually denoted as BSi s or Si s .…”
Section: Gate Oxide/substrate (Sio 2 /Si) Interfacementioning
confidence: 99%
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“…They can be directly created by incident photons/hot electrons tunnelling from the substrate or the gate [43,44], however this amount can be neglected. The direct creation of FST is only emphasized in the case of hot electrons for the positive gate bias applied to thin oxides (d ox < 10 nm), where the electrons, tunnelling in the conduction band of oxide, pass the oxide without any collisions (the probability for collision process is small), accelerating themselves and reaching the interface with energy enough for an interface defect creation.…”
Section: Gate Oxide/substrate (Sio 2 -Si) Interfacementioning
confidence: 99%