Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress

Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors

“…The electron, which is now in the shallow centre, can easily tunnel from this shallow centre to the next adjacent shallow centre, enabling the holes transport towards the interface. The pictures are similar for the negative gate bias [31].…”

“…Namely, the secondary electrons released in the oxide by the gamma photons (IR), and the hot electrons (HCI), and, eventually, the secondary electrons released by the hot electrons play a main role in defect creations. However, it has been shown [22,[27][28][29][30][31] that a difference in electron energy has a significant influence on the created defect types. For instance, the highly energetic secondary electrons (the IR case) produce significantly less negatively charged FT than the low-energy hot electrons (the HCI case).…”

“…Besides, the hot and secondary electrons can produce more electron-hole pairs before they leave the oxide. In addition, some hot/secondary electrons could be trapped at electron centres creating negative charge, which is a very probable mechanism [31].…”

Radiation Hardness of Semiconductor Programmable Memories and Over-Voltage Protection Components

“…Holes trapped at the oxide/substrate interface which recombine with electrons injected from the substrate may produce another kind of amphoteric defect (Si 3 ≡Si • , a silicon atom at the interface back bonded to three silicon atoms from the floating gate) (Ristić et al, 2007). Interface traps may also be generated through direct interaction of incident gamma photons.…”

Comparison between positive and negative bias stress on N‐channel VDMOSFET transistors

“…When a metal-oxide-semiconductor (MOS) device is subjected to a high electrical field stress, electrons which acquired a sufficient energy to cross the barrier potential between the semiconductor and its oxide are injected into the gate oxide via Fowler-Nordheim (FN) tunneling. A fraction of these injected electrons creates additional electron-holes pairs in the oxide through impact ionization (Lenzlinger and Snow, 1969;Shatzkes and Av-Ron, 1976;Ristić et al, 2007) which leads to the creation of oxide trapped charges and interface traps (Ma and Dressendorfer, 1989). Defects induced by electrical stress result in the degradation of the device electrical characteristics (Lu et al, 2010).…”