Hot-electron noise spectroscopy for HFET channels

Šermukšnis, E.; Liberis, J.; Šimukovič, A.; Matulionis, A.; Ullah, Barkat; Toporkov, Mykyta; Avrutin, Vitaliy; Özgür, Ü.; Morkoç̌, H.

doi:10.1109/icnf.2017.7985979

Cited by 2 publications

(2 citation statements)

References 13 publications

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“…A slightly lower τ e value was estimated in a case of dynamic screening. In GaN-based channels of higher 2DEG density, even ∼5 ps was measured [38]. However, the aforementioned models and experiments were not applied to the ZnO-based heterostructures.…”

Section: Discussionmentioning

confidence: 99%

“…Both (pulsed) waveforms are acquired by inserting coaxial voltage and current probes between the pulse generator and the sample. More details on the microwave noise measurement setup can be found elsewhere [15,38]. The C-V characteristics are measured on rectangular Schottky patterns (Figure 1b) with the use of an LCR meter operating at 2 MHz stimulus frequency.…”

Section: Samples and Measurement Techniquesmentioning

confidence: 99%

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Hot-Electron Microwave Noise and Energy Relaxation in (Be)MgZnO/ZnO Heterostructures

Šermukšnis,

Šimukovič,

Avrutin

et al. 2024

Crystals

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Pulsed hot-electron microwave noise measurements of the (Be)MgZnO/ZnO heterostructures are presented in this work. The heterostructures of different barrier thicknesses and different bulk electron densities in ZnO layer are compared. Capacitance–voltage (C–V) measurements reveal the decrease in the two-dimensional electron gas (2DEG) peak in electron density profile at the Zn-polar BeMgZnO/ZnO interface as the BeMgZnO barrier layer thickness decreases. For thin-barrier heterostructures, the peak disappears and only the bulk electron density is resolved in C–V measurements. The excess noise temperature at ∼10 GHz in thick-barrier heterostructures is noticeably higher (∼10 times) compared to thin-barrier heterostructures, which is attributed to the strong noise source in the contacts of the former. In the case of thin-barrier heterostructures, at electric fields above ∼10 kV/cm and electron density ≳1×1017cm−3, strong noise source is resolved, which was also observed earlier in the Ga-doped ZnO films due to the formation of self-supporting high-field domains. However, for the low electron densities (≲6 ×1016 cm−3), the aforementioned noise source is not observed, which suggests the importance of a deep ZnO/GaN interface with 2DEG for power dissipation. The hot-electron temperature dependence on the dissipated power of those low-electron-density heterostructures is similar to that of O-polar ZnO/MgZnO. The estimated electron energy relaxation time in ZnO/MgZnO is ∼0.45 ps ± 0.05 ps at dissipated electrical power per electron of ∼0.1 nW/el and approaches ∼0.1 ps as the dissipated power is increased above ∼10 nW/el.

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Section: Discussionmentioning

confidence: 99%

Section: Samples and Measurement Techniquesmentioning

confidence: 99%

Hot-Electron Microwave Noise and Energy Relaxation in (Be)MgZnO/ZnO Heterostructures

Šermukšnis,

Šimukovič,

Avrutin

et al. 2024

Crystals

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Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

et al. 2022

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In this work, we investigated the self-heating effects of annealed Ti/Al/Ni/Au ohmic contacts and two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures under strong electric field by using the short pulse current–voltage and microwave noise measurement techniques. The experimental results demonstrated that the self-heating phenomena in ohmic contacts with the increase of current may dominate over the electrical performances of 2DEG channel. Moreover, the excess noise temperature of contact resistance was found to be more than four times higher than that of 2DEG channel at the same high current density values. The results reveal the importance of self-heating of the ohmic contacts on the device performance under short-duration (only 100 ns) and low-duty-cycle (only 10−5) pulse regime.

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Hot-electron noise spectroscopy for HFET channels

Cited by 2 publications

References 13 publications

Hot-Electron Microwave Noise and Energy Relaxation in (Be)MgZnO/ZnO Heterostructures

Hot-Electron Microwave Noise and Energy Relaxation in (Be)MgZnO/ZnO Heterostructures

Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

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