Hot-electron photocurrent detection of near-infrared light based on ZnO

Hou, Yaonan; Liang, H.W.; Tang, Aihua; Du, Xiaolong; Mei, Zhigang

doi:10.1063/5.0031719

Cited by 10 publications

(3 citation statements)

References 38 publications

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“…By combining the antennas with a semiconducting material, these hot carriers will contribute to a photocurrent via the internal photoeffect (IPE). This approach has been used for photodetectors with a broadband response in the visible (VIS) and near infrared (NIR) regime [6,24,28], independent of the bandgap of the used semiconductor (SC), while the resonant behavior of plasmonic nanoantennas has allowed to selectively enhance the detection of a defined wavelength range, which can be tuned via the antenna geometry [12,9,16]. Moreover electronic responsivity switching [28] and polarization detection [9,16] have been reported for plasmonic IPE detectors.…”

Section: Introductionmentioning

confidence: 99%

“…This approach has been used for photodetectors with a broadband response in the visible (VIS) and near infrared (NIR) regime [6,24,28], independent of the bandgap of the used semiconductor (SC), while the resonant behavior of plasmonic nanoantennas has allowed to selectively enhance the detection of a defined wavelength range, which can be tuned via the antenna geometry [12,9,16]. Moreover electronic responsivity switching [28] and polarization detection [9,16] have been reported for plasmonic IPE detectors. However, to achieve reasonable photocurrents, large arrays of nanostructures had to be used so far [10].…”

Section: Introductionmentioning

confidence: 99%

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Tunable nano-plasmonic photodetectors

Pertsch,

Kullock,

Gabriel

et al. 2022

Preprint

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Visible and infrared photons can be detected with a broadband response via the internal photoeffect. By using plasmonic nanostructures, i.e. nanoantennas, wavelength selectivity can be introduced to such detectors through geometry-dependent resonances. Also, additional functionality, like electronic responsivity switching and polarization detection have been realized. However, previous devices consisted of large arrays of nanostructures to achieve detectable photocurrents.Here we show that this concept can be scaled down to a single antenna level, resulting in detector dimensions well below the resonance wavelength of the device. Our design consists of a single electrically-connected plasmonic nanoantenna covered with a wide-bandgap semiconductor allowing broadband photodetection in the VIS/NIR via injection of hot carriers. We demonstrate electrical switching of the color sensitivity as well as polarization detection. Our results hold promise for the realization of ultra small, highly integratable photodetectors with advanced functionality.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Tunable nano-plasmonic photodetectors

Pertsch,

Kullock,

Gabriel

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…By combining the antennas with a semiconducting material, these hot carriers will contribute to a photocurrent via the internal photoeffect (IPE). This approach has been used for photodetectors with a broadband response in the visible (VIS) and near-infrared (NIR) regime, − independent of the bandgap of the used semiconductor (SC), while the resonant behavior of plasmonic nanoantennas has allowed selective enhancement of the detection of a defined wavelength range, which can be tuned via the antenna geometry. − Moreover electronic responsivity switching and polarization detection , have been reported for plasmonic IPE detectors. However, to achieve reasonable photocurrents, large arrays of nanostructures had to be used so far …”

mentioning

confidence: 99%

Tunable Nanoplasmonic Photodetectors

et al. 2022

View full text Add to dashboard Cite

Visible and infrared photons can be detected with a broadband response via the internal photoeffect. By use of plasmonic nanostructures, i.e., nanoantennas, wavelength selectivity can be introduced to such detectors through geometry-dependent resonances. Also, additional functionality, like electronic responsivity switching and polarization detection, has been realized. However, previous devices consisted of large arrays of nanostructures to achieve detectable photocurrents. Here we show that this concept can be scaled down to a single antenna level, resulting in detector dimensions well below the resonance wavelength of the device. Our design consists of a single electrically connected plasmonic nanoantenna covered with a wide-bandgap semiconductor allowing broadband photodetection in the visible/near-infrared via injection of hot carriers. We demonstrate electrical switching of the color sensitivity as well as polarization detection. Our results hold promise for the realization of ultrasmall photodetectors with advanced functionality.

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Electronic Delocalization Engineering of β‐AsP Enabled High‐Efficient Multisource Logic Nanodevices

Liu,

Wang,

et al. 2024

Adv Funct Materials

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Delocalized electron and phonon structures are directives for rationally tuning the intrinsic physicochemical properties of 2D materials by redistributing electronic density. However, it is still challenging to accurately manipulate the delocalized electron and systematically study the relationships between physiochemical properties and practical nanodevices. Herein, the effects of delocalized electrons engineering on blue‐arsenic‐phosphorus (β‐AsP)‐based practical devices are systematically investigated via implementing vacancies or heteroatom doping. A tendency of carrier conductivity property from “half‐metal” to “metal” is initially found when tuning the electronic structure of β‐AsP with adjustable vacancy concentrations below 2 at% or above 3 at%, which can be ascribed to the introduction of delocalized electrons that cause asymmetric contributions to the electronic states near the implementation site. In optical logic device simulations, broadband response, triangular wave circuit system signal, and reverse polarization anisotropy are achieved by adjusting the vacancy concentration, while extinction ratios are as high as 1561. The electric and thermic‐logic devices realize the highest available reported giant magnetoresistance (MR) up to 1013% and 1039% at vacancy concentrations of 1.67% and 0.89%, respectively, which is significantly superior to the reports. The results shed light on the electronic delocalization strategy of regulating internal structures to achieve highly efficient nanodevices.

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Hot-electron photocurrent detection of near-infrared light based on ZnO

Cited by 10 publications

References 38 publications

Tunable nano-plasmonic photodetectors

Tunable nano-plasmonic photodetectors

Tunable Nanoplasmonic Photodetectors

Electronic Delocalization Engineering of β‐AsP Enabled High‐Efficient Multisource Logic Nanodevices

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