2017
DOI: 10.1002/adfm.201706105
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Hot Electrons and Hot Spins at Metal–Organic Interfaces

Abstract: A model is developed to describe the electron transport properties of hot electron devices based on organic semiconductors. For the first time, the simulations cover all the different processes the carriers experience in the device, which allows disentangling various effects on the transport characteristics. The model is compared to experimental measurements and excellent agreement is found. In addition, the model includes the electron spin and is thus able to describe a hot spin transistor. In this device, a … Show more

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Cited by 17 publications
(17 citation statements)
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References 154 publications
(173 reference statements)
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“…2a, c) taking into account the increase of the inelastic scattering in the base with temperature (see Fig. 2b, d, Supplementary Table 2 and Supplementary Note 1) 36 . In addition, Supplementary Fig.…”
Section: Resultsmentioning
confidence: 99%
“…2a, c) taking into account the increase of the inelastic scattering in the base with temperature (see Fig. 2b, d, Supplementary Table 2 and Supplementary Note 1) 36 . In addition, Supplementary Fig.…”
Section: Resultsmentioning
confidence: 99%
“…[ 3,4 ] In this case, only spin‐up polarized states exist in LSMO thin film unlike FM metals according to the spin polarization simulation formula: (N ↑ ‐N ↓ )/(N ↑ +N ↓ ) × 100% (N ↑ stands for spin‐up density, N ↓ represents spin‐down density). [ 68 ] From this perspective, analyzing negative MR resource via such half‐metal spin polarizer is a better choice. We first measured the MR response of the device fabricated by employing DCB solvent.…”
Section: Resultsmentioning
confidence: 99%
“…Here, hot electrons will be attenuated in the metallic base, which can be described by formula (2). 19 sðE;…”
Section: Device Structure and Working Principle Of Hetmentioning
confidence: 99%
“…In recent years, hot electron transistors (HETs) have been developed to determine intrinsic energy levels and perform an in-depth analysis of the energy level alignment. 19 In this study, a molecule-based device comprising a metallic base, molecular semiconductor, and metallic collector is placed in a HET. The in-situ detection of energy levels and interfacial energy level alignments has been realized for the first time.…”
Section: Introductionmentioning
confidence: 99%