Hot Electrons in Si(100) Inversion Layer at Low Lattice Temperatures

Low-temperature electron-phonon interaction in Si MOSFETs

“…Recent measurements in SiGe agree roughly with our data, 16 but these authors apparently neglected the error in Ref. 1.…”

“…In the 1970s and early 1980s, several theoretical and experimental groups worked on the question of lowtemperature electron-phonon coupling in two-dimensional electron gases in silicon metal-oxide-semiconductor fieldeffect transistors ͑MOSFETs͒. [1][2][3][4][5][6] The work was motivated by the difference between the actual and theoretical mobilities of silicon MOSFETs and the possibility of making better devices. However, agreement was never reached on either the magnitude or the temperature dependence of the interaction.…”

“…. Here R sq is the resistance per square of the sample, L is the length, n the electron number density, and L the Lorenz constant 1 3 (k B /e) 2 ϭ2.44 ϫ10 Ϫ8 W⍀/K 2 . T c is the electron temperature reached at the center of the sample.…”

Paradigms of modern epileptology

“…3.3). Now we discuss the results of works [147,148,149,150]. In [147] and [148], the electron scattering in Si inversion layers has been calculated in the high, T e = 200 ÷ 300 K, and low, T e = 1 ÷ 30 K, temperature ranges, respectively.…”

“…Interfaces always exist in real structures such as inversion layers, heterostructures, and quantum wells. (The only exceptions are [147,148,149,150]. All these treatments will be discussed later.…”