Negative magnetoresistance and Anderson localization in Si-MOSFETs and other 2D systems in semiconductor interfaces

Kawaji, Shinji; Kawaguchi, Yoichi

doi:10.1007/3-540-11996-5_9

Cited by 6 publications

(1 citation statement)

References 32 publications

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“…to explain this effect. The negative magnetoresistance effect in Si inversion layers was explained by the electron-electron interaction [4]. We try t o explore the localization effects in the InPSiO, system and guess that the crystal polarity of I n P should have important effects on the localization of electrons.…”

Section: Introductionmentioning

confidence: 99%

Localization Effect of Electrons in the InP–SiO₂ Interface

Er‐Wang

Hung-rei

Wang

et al. 1986

Physica Status Solidi (b)

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A research on the conductivity of the InP-SiO, interface reveals a localization effect related to long-range fluctuations of the surface potential. The investigation of the negative magnetoresistance effect shows that the inelastic scattering interactions of electron-electron and electron-polar optic phonon play an important role in the I n P interface and obviously affect the negative magnetoresistance. Interaction between electrons is decisively important in activated localization conductance and Mott's mobility edge model is the limit of the model obtained by neglecting the interaction.Die Untersuchung der Leitfahigkeit der InP-Si0,-Grenzflache ergibt einen Lokalisierungseffekt, der mit weitreichenden Fluktuationen des OberflachenpotentiaIs verknupft ist. Die Untersuchung des negativen Magnetowiderstands zeigt, daI3 die inelastischen Elektronen-Elektronen-und Elektronen-polare optische Phononen-Streuwechselwirkungen eine wesentliche Rolle in der InP-Grenzflache spielen und offensichtlich den negativen Magnetowiderstand beeinflussen. Die Wechselwirkung zwischen den Elektronen ist fur die aktivierte Lokalisierungsleitfahigkeit bedeutungsvoll und das Modell der Mottschen Beweglichkeitskante ist der GrenzfaIl des Modells, der durch Vernachlassigung der Wechselwirkung erhdten wird. -1) 866 Chang Hing Road, 200050 Shanghai, The People's Republic of China.

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Section: Introductionmentioning

confidence: 99%

Localization Effect of Electrons in the InP–SiO₂ Interface

Er‐Wang

Hung-rei

Wang

et al. 1986

Physica Status Solidi (b)

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Inelastic scattering of electrons at the InP‐SiO₂ interface

Er‐Wang

Hung-rei

Wang

et al. 1986

Physica Status Solidi (b)

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The negative magnetoresistance effect of the InP-SiO, interface is investigated. The results indicate that the inelastic interaction of electrons with polar optical phonons plays an important role in the inelastic scattering process of the system. Es wird der negative Magnetowiderstandseffekt an der InP-Si0,-Grenzflache untersucht. Die Ergebnisse zeigen, daB die inelastische Wechselwirkung der Elektronen mit polaren optischen Phononen eine wesentliche Rolle im inelastischen Streuprozel3 des Systems spielt.

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