Hot isostatic pressing of transition metal ions into chalcogenide laser host crystals

Stites, Ronald W.; McDaniel, Sean A.; Barnes, Jacob O.; Krein, Douglas M.; Goldsmith, John; Guha, Shekhar; Cook, Gary

doi:10.1364/ome.6.003339

Cited by 26 publications

(4 citation statements)

References 18 publications

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“…We have previously demonstrated a Cr:ZnSe laser based on a crystal produced using exclusively HIP techniques. 37 Figure 17(a) shows the output spectrum of this laser, which is seen to collapse to a subnanometer linewidth. 3.…”

Section: Crystal Effects On Emission Linewidthmentioning

confidence: 99%

“…Likewise, Fig. 13 shows the temperature-dependent absorption spectra of a sample of Fe:CdTe taken from 6.2 to 300 K. This sample of Fe:CdTe was produced using HIP techniques 37 and the exact concentration of the Fe2+ ions was not measured, but we estimate that the average ionic concentration was >1019 cm−3 based on the high optical density. The ZPLs are saturated in the measurement, but agree with the measurement of Udo et al 9 .…”

Section: Fe:ii–vi Temperature-dependent Absorption Spectramentioning

confidence: 99%

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Crystal host engineering for transition metal lasers

et al. 2023

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Much progress has been made in the power and energy scaling of mid-infrared lasers based on transition metal ions, such as Cr 2þ , Co 2þ , and Fe 2þ , in zinc and cadmium chalcogenides. Still, the exploration of the physics of these devices is incomplete. In this work, we analyze absorption spectra collected from Fe 2þ ions in several binary, ternary, and quaternary host crystals at temperatures from a few degrees Kelvin to room temperature. We use the zero-phonon lines of the low-temperature spectra to calculate the value of the crystal field energy of Fe 2þ ions in these hosts. We plot these crystal field energies with respect to the anion-cation distance of the host crystal and show that their crystal field strengths deviate somewhat from the trend predicted by crystal field theory. We use a model which we previously developed to describe the upper state lifetime of Fe 2þ ions to predict the steady-state radiative efficiency of Fe:II-VI materials with respect to temperature. The impact of relative crystalline disorder on the output characteristics of lasers based on Cr:ZnS, Cr:ZnSe, Fe:ZnSe, and Fe:CdMnTe is explored. The effect of decreased long-range order of the host crystal is observed in the broadening of the absorption spectra of Fe 2þ -doped ternary and quaternary alloys, the broadening of the spectral linewidth of continuous-wave Fe:II-VI lasers, and a reduction in the portion of the Cr:ZnSe emission spectrum accessible for modelocked lasing. This survey provides a richer picture of the tradespaces that can be leveraged when producing laser devices based on transition metal chalcogenides. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 International License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Crystal Effects On Emission Linewidthmentioning

confidence: 99%

Section: Fe:ii–vi Temperature-dependent Absorption Spectramentioning

confidence: 99%

Crystal host engineering for transition metal lasers

et al. 2023

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“…Pressures on the order of 30, 000 psi can produce large shifts in the band-gap of the material of up to 1000 cm −1 [37]. Pressures and temperatures in this range have shown to be highly useful in post-processing of laser samples in order to obtain higher spectral brightness and remove material defects [38].…”

Section: Physical Processesmentioning

confidence: 99%

Mid-IR Ultrafast Laser Inscribed Waveguides and Devices

McDaniel

Thorburn

Liebig

et al. 2019

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

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MID-IR ULTRAFAST LASER INSCRIBED WAVEGUIDES AND DEVICES Name: McDaniel, Sean A. University of Dayton Advisor: Dr. Gary Cook Ultrafast laser inscription (ULI) is a highly versatile technique for creating index modifications in glasses and crystalline materials. The process of ULI relies on ultrashort laser pulses focused inside of a material. The high intensity of the pulsed beam induces nonlinear absorption processes, which transfers the pulse energy to the material lattice. With careful experimental control of the laser parameters, a permanent change in the refractive can be obtained in the bulk material. The permanent refractive index change obtained by ULI can be used to create waveguides in active laser materials, such as Cr:ZnSe, Fe:ZnSe and Ho:YAG.Transition metal and rare-earth laser sources have been shown to operate over the 2 − 5 µm range. ULI can be used in conjunction with these materials to produce high power, guided-wave structures with reduced size, weight and power (SWaP) requirements. Power levels for Cr:ZnSe and Fe:ZnSe have been scaled to > 5 W and > 1 W respectively in ULI waveguide devices.Additionally, the first Ho:YAG ULI laser has been investigated, exhibiting output powers of ≈ 2 W .In addition to these advances, the theoretical limit for transition metal waveguide lasers was investigated. Transition metal lasers are highly sensitive to the operating temperature of the laser device. If the temperature increase induced in the sample is too high, phonon assisted transitions iii become dominant, thus decreasing the performance of the laser. Laser rate-equations and a thermal model for ULI waveguides were developed to establish a theoretical limit to ULI waveguide operation.Finally, several advancements were made with respect to creating ULI waveguides. An algorithm was developed for creating arbitrary ULI structures from computer generated models. The ability to create arbitrarily generated structures provides the ability to create complex structures using ULI, such as splitters, couplers, and photonic lanterns. Furthermore, a new helical inscription technique was devised for creating smooth index profiles and for creating Bragg structuring. iv ACKNOWLEDGMENTS

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“…Понижение размерности РМП с матрицами А 2 B 6 позволяет достичь более высокого уровня легирования 3d-ионами, т. е. повысить предел растворимости магнитоактивной примеси в полупроводнике по сравнению с естественным для объемного материала. При этом развитие полупроводниковой лазерной техники требует совершенствования методик синтеза " рабочих элементов", особенно в плане управления диффузионными процессами [9] и получившей признание и распространение технологии " горячего изостатического прессования" (hot isostatic pressing) [10][11].…”

Section: Introductionunclassified

Характеристика микродеформационных полей в кристаллах разбавленных магнитных полупроводников ZnSe : Co по данным нейтронной дифракции

Максимов¹,

Максимова²,

Суркова³

et al. 2021

Физика Твердого Тела

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The real structure of Zn1-хCoхSe (x=0.01; 0.15) volume cubic crystals was characterized by thermal neutrons scattering method. Characteristics of resulting micro strain fields formed by atomic displacements were obtained from analyses of tangential and radial profile scans of the structure peaks measured on investigated crystals. Indications of initial lattice destabilizations revealed in both crystals demonstrate that the character of the structure distortions is quality changed by increasing of Co-impurity content from extreme small amount to close to solubility limit level. In particular, growing probability of substructure crystallites appeared from reaching of high-level doping is accompanied by strain-tensions emerged on the whole volume of crystal.

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Hot isostatic pressing of transition metal ions into chalcogenide laser host crystals

Cited by 26 publications

References 18 publications

Crystal host engineering for transition metal lasers

Crystal host engineering for transition metal lasers

Mid-IR Ultrafast Laser Inscribed Waveguides and Devices

Характеристика микродеформационных полей в кристаллах разбавленных магнитных полупроводников ZnSe : Co по данным нейтронной дифракции

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