Hot phonon effects and Auger recombination on 3 <i>μ</i>m room temperature lasing in HgTe-based multiple quantum well diodes

Афоненко, А. А.; Ушаков, Д. В.; Dubinov, A. A.; Aleshkin, V. Ya.; Morozov, S. V.; Гавриленко, В. И.

doi:10.1063/5.0098918

Cited by 3 publications

(1 citation statement)

References 58 publications

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“…Moreover, as suggested in [17], maximizing the band offsets by utilizing Cd-rich (Cd x Hg 1−x Te, x > 0.9) barrier layers can further increase this temperature. Recently, stimulated emission (SE) was obtained from HgCdTe-based heterostructures up to 240 K at the wavelength of 3.7 µm [15] and at room temperature at the wavelength of 2.7 µm [18], while theory predicts the possibility of 3 µm diode lasers operating at room temperature [19].…”

Section: Introductionmentioning

confidence: 99%

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

et al. 2022

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HgCdTe-based heterostructures with quantum wells (QWs) are a promising material for semiconductor lasers in the atmospheric transparency window (3–5 μm) thanks to the possibility of suppressing Auger recombination due to the no-parabolic law of carrier dispersion. In this work, we analyze the thresholds of stimulated emission (SE) under optical pumping from heterostructures with a different number of QWs in the active region of the structure. Total losses in structures are determined from the comparison of thresholds for the different number of QWs in the active region. It is shown that, thanks to the increased modal gain, a higher number of QWs results in lower threshold pumping intensity and, consequently, higher temperature of SE. These results indicate that improvements to the modal gain can result in a moderate uplift in the temperature of SE from mid-infrared HgCdTe-based heterostructures. On the other hand, at a high enough QW count threshold, the intensity no longer depends on the number of the QWs and is determined by the transparency concentration of a single QW.

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Section: Introductionmentioning

confidence: 99%

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

et al. 2022

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Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers

Kudryavtsev

Rumyantsev

Utochkin

et al. 2023

Journal of Applied Physics

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In this work, we study stimulated emission (SE) at 3–4 μm wavelengths from optically pumped bulk HgCdTe and HgTe/CdHgTe quantum-well heterostructures. It is proposed that, under intense excitation of such structures, energy relaxation of hot electrons occurs mostly via electron–hole scattering, while the relaxation of hot holes is direct, phonon-mediated. By balancing carrier generation/recombination and heating/cooling processes, we outline heat-induced limits to the operating temperatures of mid-IR HgCdTe lasers. Based on the existing experimental results for the SE around 3.5 μm, we predict that lasing at this wavelength may be achieved in 2.5 μm-pumped optical converters at temperatures as high as Tmax ∼ 270 K.

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Hot phonon effect in mid-infrared HgTe/CdHgTe quantum wells evaluated by quasi-steady-state photoluminescence

Kudryavtsev,

Rumyantsev,

Dubinov

et al. 2024

Applied Physics Letters

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Room-temperature photoluminescence (PL) spectra of intensely pumped HgTe/CdHgTe quantum well (QW) heterostructures emitting at around 5 μm wavelength have been investigated. Based on the model description of the PL spectra using a free-electron recombination band approach, effective electronic temperatures were determined depending on the excitation density. Within the quasi-steady-state approximation, we establish the balance between pump-induced heating of the electron gas in the QWs and phonon-mediated dissipation of this excess energy and deduce hot-phonon lifetime of ∼0.47 ps. Maximum operating temperatures for optically pumped HgTe/CdHgTe QW laser heterostructures emitting at around 5 μm are estimated depending on the excitation wavelength, and lasing at Peltier temperatures appears feasible for the pump wavelength of about 3 μm. Thus, the entire 3∼5 μm atmospheric transparency window can be potentially covered by thermoelectrically cooled HgCdTe-based laser sources.

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Hot phonon effects and Auger recombination on 3 μm room temperature lasing in HgTe-based multiple quantum well diodes

Cited by 3 publications

References 58 publications

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers

Hot phonon effect in mid-infrared HgTe/CdHgTe quantum wells evaluated by quasi-steady-state photoluminescence

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