The lack of radiation sources in the frequency range of 7-10 THz is associated with strong absorption of the THz waves on optical phonons within the GaAs Reststrahlen band. To avoid such absorption, we propose to use HgCdTe as an alternative material for THz quantum cascade lasers thanks to a lower phonon energy than in III-V semiconductors. In this work, HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band with a target frequency of 8.3 THz have been theoretically investigated using the balance equation method. The optimized active region designs, which are based on three and two quantum wells, exhibit the peak gain exceeding 100 cm−1 at 150 K. We have analyzed the temperature dependence of the peak gain and predicted the maximum operating temperatures of 170 K and 225 K for three- and two-well designs, respectively. At temperatures exceeding 120 K, the better temperature performance has been obtained for the two-well design, which is associated with a larger spatial overlap of weakly localized lasing wavefunctions, as well as, a higher population inversion. We believe that the findings of this work can open a pathway towards the development of THz quantum cascade lasers featuring a high level of optical gain due to the low electron effective mass in HgCdTe.

Operation of semiconductor lasers in the 20–50 µm wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at λ = 26, …, 30 µm at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses.

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A model based on a system of balance equations for localised and continuum states is developed to calculate the current − voltage (I − V) and power characteristics of quantum-cascade lasers (QCLs) operating in the terahertz (THz) range. A method for modifying the eigenbasis of the Schrödinger equation by reducing the dipole moments of tunnel-coupled states is proposed to take into account the effect of dephasing on the carrier transport. The calculated and experimental data on the current − voltage characteristics and the dependence of the integrated radiation intensity on current for the THz QCLs lasing at 2.3 THz are compared. The calculated and measured values of the threshold current, lasing current range, and maximum operating temperature T max are found to be in good agreement. It is shown that T max can be increased by 25 % by reducing the thickness of the top contact layer n +-GaAs of the laser structure under study from 800 to 100 nm.

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