“…The main factors that limit the temperature characteristics of mid-infrared (IR) semiconductor lasers are Auger recombination on the QWs, non-equilibrium carrier heating and Drude absorption of the free carriers. Although yet there is no experimental demonstration of injection lasers based on heterostructures with HgTe QWs, there are several theoretical proposals of diode laser aimed for mid- [15] and far-IR [22] operation as well as THz quantum cascade laser [23] based on HgCdTe. In this work given the experimental results demonstrating stimulated emission under optical pumping [19][20][21] and suppression of Auger recombination in HgTe QWs [16,24] we investigate the feasibility of HgCdTe-based injection lasers.…”