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Matulionis, A.; Liberis, J.; Matulionienė, I.; Ramonas, M.; Eastman, L.F.; Shealy, J. R.; Tilak, V.; Vertiatchikh, A.

doi:10.1103/physrevb.68.035338

Cited by 123 publications

(179 citation statements)

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“…Optical phonons dominate at high electron temperatures. When the ambient temperature is low and the dissipation through LO phonons dominates, the supplieddissipated power obeys Arrhenius-like dependence on the hot-electron noise temperature [4]:…”

Section: Ns)mentioning

confidence: 99%

“…Unlike this, the current fluctuations are generated exactly where the current flows. As a result, the noise technique for the lifetime measurement [4] is applicable to 2DEG and 3DEG channels. Supposing that the electron density per unit volume is the same, the noise technique yields the lifetime in GaN-based 2DEG channels [1,4] comparable with the values obtained by the Raman technique for bulk GaN [3].…”

Section: Introductionmentioning

confidence: 99%

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Microwave noise technique for measurement of hot-electron energy relaxation time and hot-phonon lifetime

Šermukšnis¹

2007

Lithuanian J. Phys.

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Gated modulation-type radiometric technique for microwave noise measurement is upgraded for convenient investigation of hot-electron energy relaxation and hot-phonon dynamics in a channel with a high-density electron gas. The technique is applied to a GaN-based structure held at 80 and 293 K channel temperature. The results are discussed in terms of hot-phonon effect on hot-electron energy relaxation. The hot-phonon lifetime, estimated from the noise analysis, is compared with the values obtained by more traditional techniques.

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Section: Ns)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Microwave noise technique for measurement of hot-electron energy relaxation time and hot-phonon lifetime

Šermukšnis¹

2007

Lithuanian J. Phys.

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“…This high velocity arises in part from the high mobilities that have been observed in these heterostructures [12,13]. In contrast to this, however, there are both experiments and Monte Carlo simulations which suggest that a much lower value of the velocity occurs, of the order of 1×10 7 cm/s at fields above 10 kV/cm [14,15,16]. This same group has, however, obtained a drift velocity above 2×10 7 cm/s at around 140 kV/cm [17], with essentially linear behavior at lower fields, by using short pulses.…”

Section: Introductionmentioning

confidence: 74%

High field effects of GaN HEMTs.

Barker

Shul

2004

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This report represents the completion of a Laboratory-Directed Research and Development (LDRD) program to develop and fabricate geometric test structures for the measurement of transport properties in bulk GaN and AlGaN/GaN heterostructures. A large part of this study was spent examining fabrication issues related to the test structures used in these measurements, due to the fact that GaN processing is still in its infancy. One such issue had to do with surface passivation. Test samples without a surface passivation, often failed at electric fields below 50 kV/cm, due to surface breakdown. A silicon nitride passivation layer of approximately 200 nm was used to reduce the effects of surface states and premature surface breakdown. Another issue was finding quality contacts for the material, especially in the case of the AlGaN/GaN heterostructure samples. Poor contact performance in the heterostructures plagued the test structures with lower than expected velocities due to carrier injection from the contacts themselves. Using a titanium-rich ohmic contact reduced the contact resistance and stopped the carrier injection. The final test structures had an etch constriction with 3 varying lengths and widths (8×2, 10×3, 12x3, 12×4, 15×5, and 16×4 m) and massive contacts. A pulsed voltage input and a four-point measurement in a 50 Ω environment was used to determine the current through and the voltage dropped across the constriction. From these measurements, the drift velocity as a function of the applied electric field was calculated and thus, the velocity-field characteristics in n-type bulk GaN and AlGaN/GaN test structures were determined. These measurements show an apparent saturation velocity near to 2.5×10 7 cm/s at 180 kV/cm and 3.1×10 7 cm/s, at a field of 140 kV/cm, for the bulk GaN and AlGaN heterostructure samples, respectively.These experimental drift velocities mark the highest velocities measured in these materials to date and confirm the predictions of previous theoretical models using ensemble Monte Carlo simulations.

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“…They cross the quantum wells (QWs) and quantum barriers (QBs) over the EBL to p-GaN, with or without energy exchange through interaction with phonons (in which case electron-LO-phonon scattering dominates). 13,14 Since the quasi-ballistic transport (scattering with more than one LO phonon in a single QW or QB) is negligible, 12 we just consider the electrons experiencing ballistic transport (no scattering in the QWs or QBs) and the quasi-ballistic transport (scattering with one LO phonon in a single QW or QB).…”

Section: Theoretical Approach For Ballistic Transport In Ingan/gan Mqmentioning

confidence: 99%

Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes

Huang

Liu

et al. 2016

AIP Advances

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To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs.

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Hot-phonon temperature and lifetime in a biasedAlxGa1−xN/

Cited by 123 publications

References 20 publications

Microwave noise technique for measurement of hot-electron energy relaxation time and hot-phonon lifetime

Microwave noise technique for measurement of hot-electron energy relaxation time and hot-phonon lifetime

High field effects of GaN HEMTs.

Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes

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