“…The primary cause for these phenomena is a strong change in the resistivity vs. temperature characteristic of the material used for the device under investigation. These phenomena can be observed in large number of different kind of devices: There is the hot-spot in a superconducting microbridge [19,22,23], the pinch caused by thermal breakdown in a negative temperature coefficient thermistor (NTC) [24,25], the domains in a two valley semi-conductor used in a Gunn-diode [18], the hot spot in a large BSCCO-mesa used as a THz-emitter [26][27][28][29] or the filaments in a VO 2 device [7,30] at the metal-insulator transition, to name only a few examples. In the following, only the basics of this topic necessary to understand the supplemented paper are provided.…”