Hot‐wire CVD of copper films on self‐assembled‐monolayers of MPTMS

Abstract

Self‐assembled monolayers (SAM's) of (3‐Mercaptopropyl)trimethoxysilane (MPTMS) were applied on Si (100) wafers covered either with low‐temperature silicon oxide (LTO) or with SiLK®. Cu films were subsequently chemically vapor deposited (CVD) on the MPTMS SAMs with a novel reactor equipped with a tungsten hot‐wire enabling the separate heating of the gas phase (hot‐wire CVD, HWCVD). CupraSelect®, which is the commercial name of hexafluoroacetylacetonate Cu(I) trimethylvinylsilane, was used as precursor for the deposition of Cu films and delivered in the reactor with the aid of a direct‐liquid injection system using ultra‐pure N2 as carrier gas. High quality Cu films were obtained on both LTO and SiLK®. The resistivities of HWCVD Cu films were found to be higher than those of thermally grown films. This is due possibly to the presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament, which does not, however, degrade catastrophically the conductivity of Cu HWCVD films. The separate heating of the gas phase enhanced the deposition rate, which at filament temperature of 170 °C increases by a factor of approximately one and a half. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Site-Selective Electroless Metallization on Porous Organosilica Films by Multisurface Modification of Alkyl Monolayer and Vacuum Plasma

“…There are many reports on site-selective seeding of, for example, Pd, Au, and Cu catalysts for electroless metallization on a wide variety of nonconductive substrates, including SiO 2 , conventional (pore-free) low- k dielectric films, and organic flexible substrates. − Since metallization is confined to specific areas that have catalyst particles, accuracy of site-selective adsorption and precise control over the size and distribution density of the catalysts are the key factors to achieving highly resolved metallization patterns with a film thickness of several nanometers. When conducted in a conventional manner with a PdCl 2 -based colloidal solution, the widely spread activation process generates catalytic particles with a strong tendency to agglomerate into a wide distribution from 5 nm to tens of nanometers, with limited densities, typically 10 13 cm –2 , due to weak interfacial interaction between the seeds and the underlying substrates. , As has been established, a patterned self-assembled monolayer can provide functionalized points to trap seeds by electrostatic force or hydrogen bonding, limiting the migration and agglomeration of the seeds.…”

Screen‐printed copper for front‐ and back‐side metallization of single‐ and multi‐crystalline silicon solar cells

“…Self‐assembled monolayers of MPTMS were applied on the substrates as described before , by dipping the substrates in a 1 vol% solution of the organosilane compound dissolved in toluene and heating it to 60 °C for 1 h. Samples were then rinsed in toluene, blow dried with N 2 , and baked for 10 min at 60 °C to remove liquid residue on the substrate.…”

Anode modification of BHJ organic photovoltaics using copper oxide

“…Substrates were ultrasonically cleaned with a standard solvent regiment (15 min each in acetone and isopropanol). The copper oxide layer with thickness of 10 nm and 20 nm was then deposited in a thermal evaporator, described elsewhere [25][26][27][28], at temperature of 350 ºC, followed by an approximately 120 nm photoactive layer. The active layer consisted of the P3HT:PC71BM blend (1:0.8 wt.% ratio) and was spin-cast on the metal oxide film from a 10 mg/ml chloroform solution.…”