2015
DOI: 10.1111/jmi.12242
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How important is the {103} plane of stable Ge2Sb2Te5 for phase‐change memory?

Abstract: Closely correlating with {200} plane of cubic phase, {103} plane of hexagonal phase of Ge(2)Sb(2)Te(5) plays a crucial role in achieving fast phase change process as well as formation of modulation structures, dislocations and twins in Ge(2)Sb(2)Te(5). The behaviors of {103} plane of hexagonal phase render the phase-change memory process as a nanoscale shape memory.

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Cited by 6 publications
(3 citation statements)
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“…In view of the similar configuration and minor energy discrepancy between the 100% VOC- and h-GST lattices, a non-diffusion controlled slide of the building blocks was proposed to understand the f-to-h transformation 18 . Analogous research achievement stated that a shearing martensitic transformation from {200} planes of f-GST to {} planes of h-GST should be energetically favorable during f-to-h transition 19, 20 . In addition, the discovery of twin crystals consisted by one f- and one h-grain led to an “epitaxial growth model” to interpret the structure evolution manner as f-GST approaching the h-phase 21, 22 .…”
Section: Introductionmentioning
confidence: 99%
“…In view of the similar configuration and minor energy discrepancy between the 100% VOC- and h-GST lattices, a non-diffusion controlled slide of the building blocks was proposed to understand the f-to-h transformation 18 . Analogous research achievement stated that a shearing martensitic transformation from {200} planes of f-GST to {} planes of h-GST should be energetically favorable during f-to-h transition 19, 20 . In addition, the discovery of twin crystals consisted by one f- and one h-grain led to an “epitaxial growth model” to interpret the structure evolution manner as f-GST approaching the h-phase 21, 22 .…”
Section: Introductionmentioning
confidence: 99%
“…Considering the plausible similar atomic sequence in f-and hlattice, researchers tend to believe a diffusionless controlled mechanism should happen during the whole crystal transition process 22,37 . For example, the shearing martensitic mechanism with a twisting atomic movement 38,39 , the epitaxial growth mechanism through a continuous accumulation 40,41 , and recently, a vacancy ordering mechanism which emphasizes the critical role of the vacancy aggregation behavior 24,25,42,43 . Though above-mentioned mechanisms seem to be very intriguing, puzzles in the atomic arrangement of different structures, especially the intermediate (i-) state, obstruct the clarification of the exact transition mechanism.…”
mentioning
confidence: 99%
“…However, ordering of Ge cations in GST326 in the middle of building block was assumed. Although different GST compounds (stable and metastable) are very close in terms of structure174548495051, it is not clear why the cation layers in the GST124 structure should not possess intermixing. As an explanation, it was proposed that the Te, Sb and Ge atoms in the (0001) plane have to satisfy the 3Ge-Te-3Sb rule, in which Te atoms are surrounded by three Ge and three Sb atoms located in opposite corners of the octahedron structures45.…”
Section: Resultsmentioning
confidence: 99%