How to make silica luminescent?

Fitting, H.‐J.

doi:10.1016/j.jlumin.2009.01.033

Cited by 17 publications

(12 citation statements)

References 21 publications

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“…The contribution of the NBOHCs band at about 640 nm is hardly detectable and may be at the origin of the long tail in the region of large wavelength ͑550-800 nm͒. 30 On the other hand, a small band is also observed at 280 nm, which is also ascribed to SiODCs, in accordance with previous studies. On the other hand, a double band peaking at 450 and 480 nm appears for this Si-rich sample, as already observed for similar SRSO samples in this wavelength range.…”

Section: Resultssupporting

confidence: 90%

“…The NBOHCs usually arise from interstitial oxygen and are expected to be negligible here due to the Si excess. 26,[28][29][30][31][32] In the light of these results, it is worth noting that the efficient CL emission of the SiO 2 matrix is modified by the introduction of excess Si. 30,32 The presence of such peaks can originate from the incorporation of Si excess which favors the formation of specific kinds of ODCs such as the so-called 'discoordinated Si' or 'Neutral Oxygen Vacancy,' 26 labeled here silicon-ODCs ͑SiODC͒.…”

Section: Resultsmentioning

confidence: 90%

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Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Cueff

Labbé

Dierre

et al. 2010

Journal of Applied Physics

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Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes Appl. Phys. Lett. 97, 081109 (2010); 10.1063/1.3483771Resonant structures based on amorphous silicon suboxide doped with Er 3 + with silicon nanoclusters for an efficient emission at 1550 nm Current transport and electroluminescence mechanisms in thin SiO 2 films containing Si nanocluster-sensitized erbium ionsThis study reports on the investigation and characterization of the different emitting centers within SiO 2 codoped by Er 3+ ions and silicon-excess. Erbium doped silicon-rich silicon oxide ͑SRSO:Er͒ thin films, fabricated by magnetron cosputtering at 500°C, were analyzed by means of cathodoluminescence. The CL spectra of SRSO, Er-doped SiO 2 and SRSO:Er were recorded and compared for various annealing temperatures. It was found that some specific optically-active point-defects called silicon-oxygen-deficient centers ͑SiODCs͒ are present in all kinds of samples. In the layers containing some excess Si, the phase separation between Si nanoclusters ͑Si-ncs͒ and SiO 2 is observed when the annealing temperature reaches and exceeds 900°C. The formation of Si-nc increases with annealing at the expense of SiODCs that was assumed to act as seeds for the growth of Si-nc. For SRSO:Er samples, the contribution of SiODCs overlaps that due to Er 3+ transitions in the visible range. The emissions from SiODCs are drastically reduced when an SRSO sample is doped with Er ions, whereas the Er emissions in the visible range start to be distinctly observed. We propose a scenario of energy transfer from SiODCs toward the Er ions, especially as the emissions from the Si-based entities ͑SiODCs, Si-nc͒ and from some transitions of Er ions are located in a same visible broad range.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 90%

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Cueff

Labbé

Dierre

et al. 2010

Journal of Applied Physics

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“…This large band is the sum of different contributions, namely Oxygen Vacancies (in this case Oxygen Deficient Centre) and Non Bridging Oxygen Hole Centers (NBOHC) [23]. This kind of CL spectrum was already observed by other research groups [24,25]. When excess-silicon is introduced for SRSO sample, the corresponding CL spectrum presents two peaks centered at 450 nm and 480 nm, likely to be related to Oxygen Deficient Center (ODC) [23].…”

Section: Cathodoluminescence Spectrasupporting

confidence: 51%

Optical and structural properties of SiO 2 co-doped with Si-nc and Er³⁺ions

Cueff

Labbé²,

Dierre³

et al. 2010

Nanostructured Thin Films III

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We present a study on erbium-doped silicon rich silicon oxide (SRSO:Er) thin films grown by the magnetron cosputtering of a three confocal cathodes according to the deposition temperature and the annealing treatment. It is shown that several parameters such as the stoichiometry SiO x , the Erbium content and the fraction of agglomerated Silicon are strongly influenced by the deposition temperature. Especially, an increase of the fraction of agglomerated-Si concomitant to a reduction of the erbium content is observed when the deposition temperature is raised. These structural differences have some repercussions on the optical properties that lead to better performances for high-temperature deposited material. It is illustrated by the Er-PL efficiency that is higher for 500°C-deposited than for RT-deposited sample at all annealing temperatures. Finally an investigation of the different emitting centres within the films is performed with a cathodoluminescence technique to highlight the emission of optically-active defect centers in the matrix. It is shown that some oxygen vacancies, namely Silicon-Oxygen Deficient Centers, have a strong contribution around 450-500 nm and are suspected to contribute to the energy transfer towards Er 3+ ions.

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“…Finally, the peak at 3.05 eV is ascribed to the presence of sulfur dopant in the silicon oxide matrix, as demonstrated by previous works reporting CL spectroscopy of sulfur ion implanted SiO 2 films. 25,26 The presence of sulfur in the SiO x microstructure is confirmed by the EDX spectroscopy ( Figure 3(e)) and EELS mapping (Figure 4(c)). …”

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confidence: 75%

Origin of the visible emission of black silicon microstructures

Fabbri

Lin

Bertoni

et al. 2015

Applied Physics Letters

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Silicon, the mainstay semiconductor in microelectronics, is considered unsuitable for optoelectronic applications due to its indirect electronic band gap that limits its efficiency as light emitter. Here, we univocally determine at the nanoscale the origin of visible emission in microstructured black silicon by cathodoluminescence spectroscopy and imaging. We demonstrate the formation of amorphous silicon oxide microstructures with a white emission. The white emission is composed by four features peaking at 1.98 eV, 2.24 eV, 2.77 eV, and 3.05 eV. The origin of such emissions is related to SiOx intrinsic point defects and to the sulfur doping due to the laser processing. Similar results go in the direction of developing optoelectronic devices suitable for silicon-based circuitry.

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How to make silica luminescent?

Cited by 17 publications

References 21 publications

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Optical and structural properties of SiO 2 co-doped with Si-nc and Er³⁺ions

Origin of the visible emission of black silicon microstructures

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How to make silica luminescent?

Cited by 17 publications

References 21 publications

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

Optical and structural properties of SiO 2 co-doped with Si-nc and Er3+ions

Origin of the visible emission of black silicon microstructures

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Product

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Optical and structural properties of SiO 2 co-doped with Si-nc and Er³⁺ions