The variance of carrier relaxation pathways for WO3–x
plasmonic semiconductor nanocrystals
(PSNCs) is
monitored by transient absorption spectroscopy following excitation
of the localized surface plasmon resonance (LSPR) versus the optical
band gap (E
g,opt). Excitation of the LSPR
leads to efficient hot carrier population above the Fermi level in
WO3–x
via Landau damping, in analogy
to noble metal LSPR relaxation mechanisms. Hot carrier depopulation
occurs on the femtosecond timescale, observed as the concomitant recovery
of an LSPR bleach with the appearance of discrete interband and intraband
photoinduced absorption features. By comparison, the direct excitation
of E
g,opt results in trion recombination
at donor–acceptor sites within the WO3–x
NC, consistent with exciton decay dynamics observed
for typical wide-band-gap semiconductor NCs. From the analysis of
pump power dependency data, a hot-carrier electron–phonon coupling
constant of 1.47 × 1011 J K–1 s–1 cm–3 is extracted. The direct comparison
of the decay dynamics following E
g,opt versus LSPR excitation confirms that the observed plasmon in trioctylphosphine
oxide passivated, spherical WO3–x
is a resonance state in which hot carriers are generated only from
excitation on resonance with the LSPR frequency. This study on WO3–x
PSNCs provides a toolset that can
be used to evaluate the role of hot carriers following LSPR excitation
of n-type, plasmonic transparent conducting oxide NCs, where enhancement
of photocatalysis, photovoltaic performance, and optical enhancement
has been reported.