1998
DOI: 10.1016/s0040-6090(97)01103-6
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HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures

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Cited by 11 publications
(6 citation statements)
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“…2 by the curves (a1) and (a2), representing simulations of a single (Zn,Be)Se tunnel barrier layer and of a symmetric (Zn,Be)Se/(Zn,Mn)Se/(Zn,Be)Se double barrier structure on GaAs(0 0 1). As derived analytically by Haase et al [6], the curve corresponding to a single epilayer with thickness d b and composition x b of one tunnel barrier (a1) forms an envelope, under which the curve of a symmetric double-barrier structure (a2) …”
Section: Resultsmentioning
confidence: 98%
See 1 more Smart Citation
“…2 by the curves (a1) and (a2), representing simulations of a single (Zn,Be)Se tunnel barrier layer and of a symmetric (Zn,Be)Se/(Zn,Mn)Se/(Zn,Be)Se double barrier structure on GaAs(0 0 1). As derived analytically by Haase et al [6], the curve corresponding to a single epilayer with thickness d b and composition x b of one tunnel barrier (a1) forms an envelope, under which the curve of a symmetric double-barrier structure (a2) …”
Section: Resultsmentioning
confidence: 98%
“…Haase et al [6] have proposed a high-resolution X-ray diffraction (HR-XRD) based analysis of strained, centrosymmetric double barrier RTDs, which allows to determine the thickness and composition of barrier and quantum well layers in final device structures, even though the scattering volume of the few nm thin active region is very low compared to the encompassing, thick contact layers. It relies on high tensile strain in the tunnel barrier layers, which clearly separates the diffraction features originating from the double barrier region from those coming from the much thicker contact layers and the substrate.…”
Section: Introductionmentioning
confidence: 99%
“…On the high-angle side, the intensity beat caused by the diffraction from the double-barrier structure is clearly observed. According to the literature [20,23,24], the relationship among the positions of intensity beat minima, the barrier and well thickness (t B and t W ), and X-ray wavelength l is given by…”
Section: Methodsmentioning
confidence: 99%
“…The undoped intrinsic highly strained RTD structure is grown at T g = 440 • C. The standard layer stack consists of two d B = 2:2 nm undoped AlAs barriers and the In(Ga)As well. The well is composed of 2:6 nm InAs symmetrically sandwiched between 1:1 nm lattice matched InGaAs-smoothing layers with a total thickness of d W = 4:8 nm [11]. The intrinsic RTD is embedded between 50 nm 5 × 10 17 cm −3 Si-doped InGaAs layers grown at 520 • C. Highly doped InGaAs-interconnection layers (1:5 × 10 19 cm −3 ) facilitate a non-alloyed ohmic contact.…”
Section: Experimental Study On Homogeneity and Reproducibility Of Thementioning
confidence: 99%