Semimagnetic II–VI semiconductor resonant tunneling diodes characterized by high-resolution X-ray diffraction

Frey, Alexander; Rüth, M.; Dengel, Radu-Gabriel; Schumacher, C.; Gould, C.; Schmidt, G.; Βrunner, Karl; Molenkamp, L. W.

doi:10.1016/j.jcrysgro.2010.01.005

Cited by 3 publications

(4 citation statements)

References 15 publications

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“…On the high-angle side, the intensity beat caused by the diffraction from the double-barrier structure is clearly observed. According to the literature [20,23,24], the relationship among the positions of intensity beat minima, the barrier and well thickness (t B and t W ), and X-ray wavelength l is given by…”

Section: Methodsmentioning

confidence: 99%

High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105A/cm2 grown by metal-organic vapor-phase epitaxy

Sugiyama¹,

Teranishi

Suzuki

et al. 2011

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105A/cm2 grown by metal-organic vapor-phase epitaxy

Sugiyama¹,

Teranishi

Suzuki

et al. 2011

Journal of Crystal Growth

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“…We use high-resolution X-ray diffraction (HR-XRD) and current-voltage characterization to assess the impact of the lift-off process [10]. Fig.…”

Section: Sample Characterization After Lift-offmentioning

confidence: 99%

“…We use high-resolution x-ray diffraction (HR-XRD) and current-voltage characterization to assess the impact of the lift-off process [10]. Figure 4 shows a direct comparison of ω−2θ scans for the same RTD sample before and after removal of the substrate.…”

Section: Sample Characterization After Lift-offmentioning

confidence: 99%

Removal of GaAs growth substrates from II–VI semiconductor heterostructures

Bieker¹,

Hartmann²,

Kießling³

et al. 2014

Semicond. Sci. Technol.

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We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution X-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer. arXiv:1311.3803v1 [cond-mat.mtrl-sci]

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“…DMS based on II-VI crystals such as Zn 1-x-y Be x Mn y Se mixed compounds with the manganese are very promising materials due to their unique magnetic and optical properties [2] with potential application in the design of the miniature magnetic field sensors, magnetic random access memory, spin transistors and applications of spin-based electronics in quantum informatics [3,4]. Zn 1-x-y Be x Mn y Se semiconductors were proposed as a spin filter layers [5] with possible applications in memory technologies and also as base materials for magnetic resonant tunneling diodes (MRTD), achieving a voltage control over the spin relaxation [6,7]. Manganese exhibits a relatively high solubility in many II-VI binary compounds, behaving like an isoelectronic atom, so n-type and p-type doping is possible.…”

Section: Introductionmentioning

confidence: 99%

Thermal characterization of ZnBeMnSe mixed compounds by means of photopyroelectric and lock-in thermography methods

et al. 2015

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In this work, a thermal characterization (measurement of dynamic thermal parameters) of quaternary Zn 1-x-y Be x Mn y Se mixed crystals was carried out. The crystals under investigation were grown from the melt by the modified high-pressure Bridgman method with different Be and Mn contents. The effect of Be and Mn contents on thermal properties of Zn 1-x-y Be x Mn y Se compounds was analyzed, by using the photopyroelectric (PPE) method in the back configuration (BPPE) for thermal diffusivity measurements and the PPE technique in the front configuration for thermal effusivity investigations. Infrared lock-in thermography was used in order to validate the BPPE results. The measured thermal effusivity and diffusivity allowed the calculation of thermal conductivity of the investigated materials.

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Semimagnetic II–VI semiconductor resonant tunneling diodes characterized by high-resolution X-ray diffraction

Cited by 3 publications

References 15 publications

High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105A/cm2 grown by metal-organic vapor-phase epitaxy

High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105A/cm2 grown by metal-organic vapor-phase epitaxy

Removal of GaAs growth substrates from II–VI semiconductor heterostructures

Thermal characterization of ZnBeMnSe mixed compounds by means of photopyroelectric and lock-in thermography methods

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