HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3MeV Ne and 5.3MeV Kr ions

Zhang, L.M.; Zhang, C.H.; Zhang, L.Q.; Jia, Xuchao; Han, L.H.; Xu, Chaoliang; Zhang, Y.; Jin, Yufeng

doi:10.1016/j.nimb.2011.03.003

Cited by 7 publications

(6 citation statements)

References 18 publications

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“…[3]). Similar peak splitting has also been observed in the ion-irradiated GaN films and InGaN/GaN bilayers [9,[16][17][18].…”

Section: Rutherford Backscattering/channelingsupporting

confidence: 72%

“…This could also be one of the reasons why in Ref. [9], 5.3 MeV 84 Kr irradiation with a larger nuclear energy deposition led to a smaller lattice expansion in In 0.15 Ga 0.85 N than 2.3 MeV 20 Ne irradiation [19].…”

Section: High Resolution X-ray Diffractionmentioning

confidence: 99%

“…Despite such technical importance, compared with GaN, only a few studies have been reported on radiation effects in InGaN [2][3][4][5][6][7][8][9][10]. In Refs.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structural damage in InGaN induced by MeV heavy ion irradiation

Zhang¹,

Fadanelli²,

Hu³

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…[3]). Similar peak splitting has also been observed in the ion-irradiated GaN films and InGaN/GaN bilayers [9,[16][17][18].…”

Section: Rutherford Backscattering/channelingsupporting

confidence: 72%

Section: High Resolution X-ray Diffractionmentioning

confidence: 99%

See 1 more Smart Citation

Structural damage in InGaN induced by MeV heavy ion irradiation

Zhang¹,

Fadanelli²,

Hu³

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

Self Cite

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“…The experiment performances on the 320-kV high-voltage platform were reported in the literature. [33][34][35][36] The implantation was performed at room temperature and the beam current flux was kept at 3.5 × 10 11 ions/cm 2 •s. The incident angle is almost parallel to the normal direction of wafer surface.…”

Section: Experiments Proceduresmentioning

confidence: 99%

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

Yang¹,

Feng²,

Jiang³

et al. 2022

Chinese Phys. B

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Chemical disorder on the surface and lattice strain in GaN implanted by Fe10+ ions are investigated. In this study, 3-MeV Fe10+ ions fluence ranges from 1 × 1013 ions/cm2 to 5 × 1015 ions/cm2 at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.

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“…Over the past decade, extensive research effort has been devoted to radiation studies of InGaN. [6][7][8][9][10][11][12] It has been found that the resistance of InGaN to irradiationinduced amorphization dramatically decreases with increasing In concentration in InGaN. While GaN is fully amorphized by room-temperature irradiation of 1 MeV Au ions to a dose of ∼ 90 dpa (displacements per atom), [13] the amorphization dose for In 0.2 Ga 0.8 N under a similar irradiation condition is only ∼ 1.4 dpa.…”

Section: Introductionmentioning

confidence: 99%

Lattice damage in InGaN induced by swift heavy ion irradiation

Liu¹,

Zhang²,

Liu³

et al. 2022

Chinese Phys. B

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Microstructural responses of In0.32Ga0.68N and In0.9Ga0.1N films to 2.25 GeV Xe ion irradiation have been investigated using X-ray diffraction, Raman scattering, ion channeling and transmission electron microscope. It is found that the In-rich In0.9Ga0.1N is more susceptible to irradiation than Ga-rich In0.32Ga0.68N. The Xe ion irradiation with a fluence of 7×1011 ions/cm2 leads to little damage in In0.32Ga0.68N, but an obvious lattice expansion in In0.9Ga0.1N. The level of lattice disorder in In0.9Ga0.1N increases after irradiation, which is due to the huge electronic energy deposition of the incident Xe ions. However, no Xe ion tracks are observed to be formed, which is attributed to the very high velocity of 2.25 GeV Xe ions. Point defects and/or small defect clusters are likely the dominating defect type in the Xe-irradiated In0.9Ga0.1N.

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HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3MeV Ne and 5.3MeV Kr ions

Cited by 7 publications

References 18 publications

Structural damage in InGaN induced by MeV heavy ion irradiation

Structural damage in InGaN induced by MeV heavy ion irradiation

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions

Lattice damage in InGaN induced by swift heavy ion irradiation

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HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3MeV Ne and 5.3MeV Kr ions

Cited by 7 publications

References 18 publications

Structural damage in InGaN induced by MeV heavy ion irradiation

Structural damage in InGaN induced by MeV heavy ion irradiation

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions

Lattice damage in InGaN induced by swift heavy ion irradiation

Contact Info

Product

Resources

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Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions