1997
DOI: 10.1016/s0925-8388(96)02683-7
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HTS thin films by innovative MOCVD processes

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Cited by 11 publications
(4 citation statements)
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“…However, the oxidation state +III of [Ce(thd) 3 ] can be stabilized by adding 1,10-phenanthroline to saturate the coordination sphere of the cerium(III) ion (Uhlemann and Dietze, 1971). The salt used to prepare the [Ce(thd) 3 (phen)] thin films of the high-temperature superconductor YBa 2 Cu 3 O 7−x and related compounds by MOCVD (Panson et al, 1989;Yamane et al, 1988;Dickinson et al, 1989;Ozawa, 1991;Busch et al, 1991;Matsuno et al, 1992;Leskelä et al, 1993;Thomas et al, 1993;Yamaguchi et al, 1989Yamaguchi et al, , 1994Richards et al, 1995;Otway and Obi, 1997;Weiss et al, 1997;Galindo et al, 2000;Polyakov et al, 2000;Zama et al, 2000;Meng et al, 2002). In most of these studies, [Y(thd) 3 ] has been used as the precursor for the yttrium component.…”
Section: Preparation Of Thin Films By Metal-organic Chemical Vapor Deposition (Mocvd)mentioning
confidence: 99%
“…However, the oxidation state +III of [Ce(thd) 3 ] can be stabilized by adding 1,10-phenanthroline to saturate the coordination sphere of the cerium(III) ion (Uhlemann and Dietze, 1971). The salt used to prepare the [Ce(thd) 3 (phen)] thin films of the high-temperature superconductor YBa 2 Cu 3 O 7−x and related compounds by MOCVD (Panson et al, 1989;Yamane et al, 1988;Dickinson et al, 1989;Ozawa, 1991;Busch et al, 1991;Matsuno et al, 1992;Leskelä et al, 1993;Thomas et al, 1993;Yamaguchi et al, 1989Yamaguchi et al, , 1994Richards et al, 1995;Otway and Obi, 1997;Weiss et al, 1997;Galindo et al, 2000;Polyakov et al, 2000;Zama et al, 2000;Meng et al, 2002). In most of these studies, [Y(thd) 3 ] has been used as the precursor for the yttrium component.…”
Section: Preparation Of Thin Films By Metal-organic Chemical Vapor Deposition (Mocvd)mentioning
confidence: 99%
“…In liquid delivery MOCVD [59±64] and aerosol MOCVD, [65,66] these points are placed between the source stocker and the vaporizer, while in conventional MOCVD with vapor phase monitoring, they are usually placed between the vaporizer and the reaction chamber. In liquid delivery MOCVD [59±64] and aerosol MOCVD, [65,66] these points are placed between the source stocker and the vaporizer, while in conventional MOCVD with vapor phase monitoring, they are usually placed between the vaporizer and the reaction chamber.…”
Section: Control Of Precursor Supply Ratementioning
confidence: 99%
“…magnetoresistive materials) [1,2]. A rapid and costless research on these materials can be realized through simple synthesis techniques as metalorganic chemical vapor a e-mail : mboudard@minatec.inpg.fr deposition (MOCVD) [3,4]. These techniques allow a rapid formatting of perovskite materials in the form of thin film on different substrate and subsequently several important parameters can be studied: phase stability, structural quality, misfit induced effect, etc.…”
Section: Introductionmentioning
confidence: 99%