2018
DOI: 10.1038/s41427-018-0085-7
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Huge magnetoresistance and ultrasharp metamagnetic transition in polycrystalline Sm0.5Ca0.25Sr0.25MnO3

Abstract: Large magnetoresistive materials are of immense interest for a number of spintronic applications by developing high density magnetic memory devices, magnetic sensors and magnetic switches. Colossal magnetoresistance, for which resistivity changes several order of magnitude (∼ 10 4 %) in an external magnetic field, occurs mainly in phase separated oxide materials, namely manganites, due to the phase competition between the ferromagnetic metallic and the antiferromagnetic insulating regions. Can one further enha… Show more

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Cited by 32 publications
(29 citation statements)
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References 52 publications
(47 reference statements)
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“…We use spin-fermion Monte Carlo (MC) technique based on the travelling cluster approximation [35,36] (TCA) for 24×24 lattice (see Ref. [30] for details). We ensured that the system is well annealed (using 10 4 Monte Carlo system sweeps in general) at each temperature.…”
Section: Physical Origin Of Memory Statesmentioning
confidence: 99%
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“…We use spin-fermion Monte Carlo (MC) technique based on the travelling cluster approximation [35,36] (TCA) for 24×24 lattice (see Ref. [30] for details). We ensured that the system is well annealed (using 10 4 Monte Carlo system sweeps in general) at each temperature.…”
Section: Physical Origin Of Memory Statesmentioning
confidence: 99%
“…We measure λ, J, ∆, h and T (temperature) in units of kinetic hopping parameter t. The estimated value of t in manganites is 0.2 eV [31]. We use J = 0.1, λ = 1.65 and ∆=0.3 for SCSMO [30]. Magnetization [= (S(q)) 0.5 at wave vector q = (0, 0), where S(q) is magnetic structure factor = 1 24 2 ij S i •S j e iq•(r i −r j ) ] is averaged over ten different disorder configurations in addition to the thermal averages obtained during the Monte Carlo simulations.…”
Section: Physical Origin Of Memory Statesmentioning
confidence: 99%
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“…In the present work, we are interested in the giant magnetoresistance (GMR) effect [41][42][43][44][45][45][46][47][48][49][50][51] , which was undoubtedly one of the groundbreaking works in the late 80s. The Nobel winning work [6,9,23,26,29] in the year 2007 by Albert Fert and Peter Grünberg has enriched the area of spintronics along with immense technological progress such as magnetic recording, storage and sensor industries, and many more [52][53][54][55].…”
Section: Introductionmentioning
confidence: 99%