Hybrid 2D/0D SnSe2-SnO2 vertical junction based high performance broadband photodetector

Vemula, Manikanta; Veeralingam, Sushmitha; Badhulika, Sushmee

doi:10.1016/j.jallcom.2021.160826

Cited by 34 publications

(17 citation statements)

References 35 publications

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“…Moreover, as shown in Figure 4 B, the response and recovery behavior were also improved with the gate voltage (1.5 V). With a gate voltage of 1.5 V, the recovery time improved from 373 s to 346 s, and the response time was decreased from 375 s to 110 s. This indicates that the energy barrier for the adsorption on the reactive sites would be decreased by the back-gate voltage, which leads to the enhanced reaction between the NO 2 gas molecules and the nanowire surface at room temperature ( Hellmich et al., 1997 ; Vemula et al., 2021 ). However, the recovery time was still slow, so further research is needed to improve it.…”

Section: Resultsmentioning

confidence: 99%

“…The enhancement of the sensing characteristics at room temperature was ascribed to the accumulation of electrons that are transferred from the as-prepared SnO 2 nanowires on the surface of the SnSe 2 layer. When the ultrathin SnSe 2 is formed on the surface of SnO 2 nanowire networks, electrons are transferred from SnO 2 to SnSe 2 due to the higher bandgap (E g ) and Fermi level (E f ) of the pure SnO 2 than those of SnSe 2 ( Matysiak et al., 2020 ; Vemula et al., 2021 ; Zhou et al., 2015 ). This creates an interface depletion layer at the SnO 2 and an accumulation layer at the SnSe 2 , as illustrated in Figure S4 .…”

Section: Resultsmentioning

confidence: 99%

“…An increase of the response was also observed with increasing gas concentration, which is attributed to the increased amount of reactive gas molecules. The back-gate voltage contributes to the electron flow by controlling the energy barrier for the adsorption of analyte gas molecules on the surface of 1D–2D hybrid nanowires ( Hellmich et al., 1997 ; Sun et al., 2012 ; Vemula et al., 2021 ). As a result, the sensing performance was improved by applying the back-gate voltage.…”

Section: Resultsmentioning

confidence: 99%

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Gate-controlled gas sensor utilizing 1D–2D hybrid nanowires network

et al. 2022

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Summary Novel gas sensors that work at room temperature are attracting attention due to their low energy consumption and stability in the presence of toxic gases. However, the development of sensing characteristics at room temperature is still a primary challenge. Diverse reaction pathways and low adsorption energy for gas molecules are required to fabricate a gas sensor that works at room temperature with high sensitivity, selectivity, and efficiency. Therefore, we enhanced the gas sensing performance at room temperature by constructing hybridized nanostructure of 1D–2D hybrid of SnSe 2 layers and SnO 2 nanowire networks and by controlling the back-gate bias (V g = 1.5 V). The response time was dramatically reduced by lowering the energy barrier for the adsorption on the reactive sites, which are controlled by the back gate. Consequently, we believe that this research could contribute to improving the performance of gas sensors that work at room temperature.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Gate-controlled gas sensor utilizing 1D–2D hybrid nanowires network

et al. 2022

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“…It was observed that the photocurrent increases with the intensity of the light. The obtained curve was fitted by the power law as I ∼ P 0.58 , where I is the photocurrent and P is the photointensity of the light . The power equation fits with an exponent (α = 0.58) between 0.5 and 1, indicating that the saturation is attributed to the kinetics of the photogenerated carriers with both recombination states and carrier–carrier interactions.…”

Section: Results and Discussionmentioning

confidence: 99%

Coaxial SnS₂/SnS Nanostructures on the Ag Fiber Substrate for Flexible Self-Powered Photodetectors

Veeralingam

Badhulika

2023

ACS Appl. Nano Mater.

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Sustainable and stable photodetectors with self-powering nature and superior performance are necessary to address the growing demand for flexible and wearable optoelectronic devices. This work demonstrates a flexible, self-powered, coaxial p−n heterojunction photodetector using SnS 2 /SnS on an Ag fiber substrate by coupling the photoexcitation property, semiconductor nature, and piezoelectric effect. Detailed characterization studies confirm the formation of hexagonal and orthorhombic crystal planes of SnS 2 and SnS nanoflakes, respectively, with a piezoelectric coefficient (d 33 ) of 175 pm/V for SnS 2 . The photoabsorption is maximum in the visible region with a direct band gap of 2.1 eV. The electrical studies display a tunable photoresponse under zerobias conditions. Upon compressive strain of 0.43%, the photoresponse increases by 36%. The I on /I off ratio of the fabricated photodetector was 10 2 at a zero bias, and the rise and decay times shorter than 1 s were obtained. The maximum external quantum efficiency of the fabricated photodetector was found to be 54.2%, owing to the superior piezo-phototronic properties. The band diagram and the charge transfer mechanism are studied to investigate the piezo-phototronic effect. The uniform strain on the Ag fiber substrate and the piezo-potential distribution upon compressive and tensile strain promotes carrier separation in the coaxial interfaces of the p−n junction. The demonstrated strategy provides a direction for developing fiber-based photodetectors with selfpowering behavior and enhanced photoresponsivity for next-generation smart wearable textile-based applications.

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“…(iv) The response time is shorter than 5.1 μs at three different wavelengths, which corresponds to a 3 dB bandwidth higher than 0.26 MHz. Such response time is shorter than those of the detectors − in Table . The rapid response of the device at different wavelengths demonstrates its potential for high-speed detection in the ultraviolet and visible spectra and broadband optical communications.…”

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confidence: 86%

Improving Photoelectric Conversion with Broadband Perovskite Metasurface

et al. 2022

Nano Lett.

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The miniaturization and integration of optoelectronic devices require progressive size reduction of active layers, resulting in less optical absorption and lower quantum efficiency. In this work, we demonstrate that introducing a metasurface made of hybrid organic−inorganic perovskite (HOIP) can significantly enhance broadband absorption and improve photonto-electron conversion, which roots from exciting Mie resonances together with suppressing optical transmission. On the basis of the HOIP metasurface, a broadband photodetector has been fabricated where photocurrent boosts more than 10 times in the frequency ranging from ultraviolet to visible. The device response time is less than 5.1 μs at wavelengths 380, 532, and 710 nm, and the relevant 3 dB bandwidth is over 0.26 MHz. Moreover, this photodetector has been applied as a signal receiver for transmitting 2D color images in broadband optical communication. These results accentuate the practical applications of HOIP metasurfaces in novel optoelectronic devices for broadband optical communication.

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Hybrid 2D/0D SnSe2-SnO2 vertical junction based high performance broadband photodetector

Cited by 34 publications

References 35 publications

Gate-controlled gas sensor utilizing 1D–2D hybrid nanowires network

Gate-controlled gas sensor utilizing 1D–2D hybrid nanowires network

Coaxial SnS₂/SnS Nanostructures on the Ag Fiber Substrate for Flexible Self-Powered Photodetectors

Improving Photoelectric Conversion with Broadband Perovskite Metasurface

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Hybrid 2D/0D SnSe2-SnO2 vertical junction based high performance broadband photodetector

Cited by 34 publications

References 35 publications

Gate-controlled gas sensor utilizing 1D–2D hybrid nanowires network

Gate-controlled gas sensor utilizing 1D–2D hybrid nanowires network

Coaxial SnS2/SnS Nanostructures on the Ag Fiber Substrate for Flexible Self-Powered Photodetectors

Improving Photoelectric Conversion with Broadband Perovskite Metasurface

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Product

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Coaxial SnS₂/SnS Nanostructures on the Ag Fiber Substrate for Flexible Self-Powered Photodetectors